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Title: Picosecond infrared switching and spectroscopy of highly excited electronic states in the narrow-gap semiconductors InSb, PbTe, and (HgCd)Te

Abstract

Picosecond optical techniques are aplied to study the spectral and dynamic properties of high-density, electron-hole plasmas in several narrow-gap semiconductors. The physics of the transient free-carrier plasma edge and its application to the study of high density plasmas and the switching of high-power, picosecond mid-infrared pulses are discussed. The design and construction of mode-locked Nd:glass and Nd:YAG lasers, a hybrid TEA CO/sub 2/ laser, and other experimental apparatus is given in detail. The arrangement and performance of a semiconductor switch generating picosecond 10.6 micron pulses of variable duration is presented. The ultrashort pulses are used to study the nonlinear transmission in InSb at 10.6 microns. An excite-probe technique is applied to measure the recombination times of high-density, electron-hole plasmas in InSb, (HgCd)Te, and PbTe. The luminescence from highly excited PbTe is characterized spectrally and temporally. Experimental results of optical gain at 5.3 microns in PbTe are given. The physics of recombination for high-density plasmas in narrow-gap semiconductors are discussed considering the applicability of models for Auger recombination. The possibility of using highly-excited narrow-gap semiconductors as picosecond, mid-infrared optical sources is considered.

Authors:
Publication Date:
Research Org.:
Brown Univ., Providence, RI (USA)
OSTI Identifier:
6830708
Resource Type:
Thesis/Dissertation
Resource Relation:
Other Information: Thesis (Ph. D.)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ANTIMONY ALLOYS; ELECTRONIC STRUCTURE; CADMIUM TELLURIDES; INDIUM ALLOYS; LEAD TELLURIDES; MERCURY TELLURIDES; SEMICONDUCTOR SWITCHES; PERFORMANCE; CARBON DIOXIDE LASERS; ELECTRON-HOLE COUPLING; EXPERIMENTAL DATA; GAIN; INFRARED SPECTRA; LASER SPECTROSCOPY; LUMINESCENCE; NEODYMIUM LASERS; PLASMA; Q-SWITCHING; RECOMBINATION; USES; ALLOYS; AMPLIFICATION; CADMIUM COMPOUNDS; CHALCOGENIDES; DATA; ELECTRICAL EQUIPMENT; EQUIPMENT; GAS LASERS; INFORMATION; LASERS; LEAD COMPOUNDS; MERCURY COMPOUNDS; NUMERICAL DATA; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SPECTRA; SPECTROSCOPY; SWITCHES; TELLURIDES; TELLURIUM COMPOUNDS; 360603* - Materials- Properties; 420300 - Engineering- Lasers- (-1989)

Citation Formats

Schwartz, B D. Picosecond infrared switching and spectroscopy of highly excited electronic states in the narrow-gap semiconductors InSb, PbTe, and (HgCd)Te. United States: N. p., 1982. Web.
Schwartz, B D. Picosecond infrared switching and spectroscopy of highly excited electronic states in the narrow-gap semiconductors InSb, PbTe, and (HgCd)Te. United States.
Schwartz, B D. 1982. "Picosecond infrared switching and spectroscopy of highly excited electronic states in the narrow-gap semiconductors InSb, PbTe, and (HgCd)Te". United States.
@article{osti_6830708,
title = {Picosecond infrared switching and spectroscopy of highly excited electronic states in the narrow-gap semiconductors InSb, PbTe, and (HgCd)Te},
author = {Schwartz, B D},
abstractNote = {Picosecond optical techniques are aplied to study the spectral and dynamic properties of high-density, electron-hole plasmas in several narrow-gap semiconductors. The physics of the transient free-carrier plasma edge and its application to the study of high density plasmas and the switching of high-power, picosecond mid-infrared pulses are discussed. The design and construction of mode-locked Nd:glass and Nd:YAG lasers, a hybrid TEA CO/sub 2/ laser, and other experimental apparatus is given in detail. The arrangement and performance of a semiconductor switch generating picosecond 10.6 micron pulses of variable duration is presented. The ultrashort pulses are used to study the nonlinear transmission in InSb at 10.6 microns. An excite-probe technique is applied to measure the recombination times of high-density, electron-hole plasmas in InSb, (HgCd)Te, and PbTe. The luminescence from highly excited PbTe is characterized spectrally and temporally. Experimental results of optical gain at 5.3 microns in PbTe are given. The physics of recombination for high-density plasmas in narrow-gap semiconductors are discussed considering the applicability of models for Auger recombination. The possibility of using highly-excited narrow-gap semiconductors as picosecond, mid-infrared optical sources is considered.},
doi = {},
url = {https://www.osti.gov/biblio/6830708}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {1}
}

Thesis/Dissertation:
Other availability
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