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Title: Low cost Schottky barrier solar cells fabricated on CdSe and Sb[sub 2]S[sub 3] films chemically deposited with silicotungstic acid

Abstract

A novel method for fabricating high efficiency metal (Pt, Au, and Ni)/(CdSe or Sb[sub 2]S[sub 3]) Schottky barrier solar cells is reported. The method is based on the fabrication of n-CdSe or Sb[sub 2]S[sub 3] thin films chemically deposited with and without silicotungstic acid (STA). The performances of the Schottky junctions fabricated with the films deposited with STA, CdSe(STA), or Sb[sub 2]S[sub 3](STA), are significantly higher than those deposited without STA. Under AM1 illumination, the photovoltaic properties of the improved Pt/CdSe(STA) diode showed V[sub oc] = 0.72 V, J[sub sc] = 14.1 mA/cm[sup 2], FF [approx equal] 0.70, and efficiency [eta] [approx equal] 7.2%. Analogous results are obtained on Pt/n-Sb[sub 2]S[sub 3](STA), where the photovoltaic response of the improved diode showed V[sub oc] = 0.63 V, J[sub sc] = 11.3 mA/cm[sup 2], FF [approx equal] 0.63, and [eta] [approx equal] 5.5%. The ideality factor (n) and saturation current density (J[sub 0]) were also significantly improved. C-V measurements at 1 MHz showed that the barrier height ([phi][sub b]) of the fabricated diodes are 0.62 and 0.59 eV for Pt/CdSe and Pt-Sb[sub 2]S[sub 3] junctions, respectively, and 0.81 and 0.80 eV for Pt/CdSe(STA) and Pt-Sb[sub 2]S[sub 3](STA) junctions, respectively. It is alsomore » observed that the [phi][sub b] values are independent of the metal work functions (W). This is attributed to the Fermi level pinning of CdSe or Sb[sub 2]S[sub 3] films deposited with and without STA.« less

Authors:
;  [1]
  1. Ecole Polytechnique de Montreal, Quebec (Canada). Dept. of Metallurgie et de Genie des Materiaux
Publication Date:
OSTI Identifier:
6827621
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society; (United States)
Additional Journal Information:
Journal Volume: 141:10; Journal ID: ISSN 0013-4651
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ANTIMONY SULFIDES; CHEMICAL VAPOR DEPOSITION; CADMIUM SELENIDE SOLAR CELLS; FABRICATION; CADMIUM SELENIDES; SCHOTTKY BARRIER SOLAR CELLS; ENERGY EFFICIENCY; PHOTOVOLTAIC CONVERSION; ANTIMONY COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; CONVERSION; DEPOSITION; DIRECT ENERGY CONVERSION; DIRECT ENERGY CONVERTERS; EFFICIENCY; ENERGY CONVERSION; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SELENIDES; SELENIUM COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Savadogo, O, and Mandal, K C. Low cost Schottky barrier solar cells fabricated on CdSe and Sb[sub 2]S[sub 3] films chemically deposited with silicotungstic acid. United States: N. p., 1994. Web. doi:10.1149/1.2059248.
Savadogo, O, & Mandal, K C. Low cost Schottky barrier solar cells fabricated on CdSe and Sb[sub 2]S[sub 3] films chemically deposited with silicotungstic acid. United States. https://doi.org/10.1149/1.2059248
Savadogo, O, and Mandal, K C. Sat . "Low cost Schottky barrier solar cells fabricated on CdSe and Sb[sub 2]S[sub 3] films chemically deposited with silicotungstic acid". United States. https://doi.org/10.1149/1.2059248.
@article{osti_6827621,
title = {Low cost Schottky barrier solar cells fabricated on CdSe and Sb[sub 2]S[sub 3] films chemically deposited with silicotungstic acid},
author = {Savadogo, O and Mandal, K C},
abstractNote = {A novel method for fabricating high efficiency metal (Pt, Au, and Ni)/(CdSe or Sb[sub 2]S[sub 3]) Schottky barrier solar cells is reported. The method is based on the fabrication of n-CdSe or Sb[sub 2]S[sub 3] thin films chemically deposited with and without silicotungstic acid (STA). The performances of the Schottky junctions fabricated with the films deposited with STA, CdSe(STA), or Sb[sub 2]S[sub 3](STA), are significantly higher than those deposited without STA. Under AM1 illumination, the photovoltaic properties of the improved Pt/CdSe(STA) diode showed V[sub oc] = 0.72 V, J[sub sc] = 14.1 mA/cm[sup 2], FF [approx equal] 0.70, and efficiency [eta] [approx equal] 7.2%. Analogous results are obtained on Pt/n-Sb[sub 2]S[sub 3](STA), where the photovoltaic response of the improved diode showed V[sub oc] = 0.63 V, J[sub sc] = 11.3 mA/cm[sup 2], FF [approx equal] 0.63, and [eta] [approx equal] 5.5%. The ideality factor (n) and saturation current density (J[sub 0]) were also significantly improved. C-V measurements at 1 MHz showed that the barrier height ([phi][sub b]) of the fabricated diodes are 0.62 and 0.59 eV for Pt/CdSe and Pt-Sb[sub 2]S[sub 3] junctions, respectively, and 0.81 and 0.80 eV for Pt/CdSe(STA) and Pt-Sb[sub 2]S[sub 3](STA) junctions, respectively. It is also observed that the [phi][sub b] values are independent of the metal work functions (W). This is attributed to the Fermi level pinning of CdSe or Sb[sub 2]S[sub 3] films deposited with and without STA.},
doi = {10.1149/1.2059248},
url = {https://www.osti.gov/biblio/6827621}, journal = {Journal of the Electrochemical Society; (United States)},
issn = {0013-4651},
number = ,
volume = 141:10,
place = {United States},
year = {1994},
month = {10}
}