Resonant Raman studies of confined LO modes and interface modes in a small-period GaAs/AlAs superlattice

Journal Article · Sun Jan 15 00:00:00 EST 1989 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.39.1696· OSTI ID:6822899

Gant, T A; Delaney, M; Klein, M V; Houdre, R; Morkoc, H

Resonant Raman scattering has been used to study the confined LO modes and interface modes near the lowest direct band gap of a GaAs/AlAs superlattice. We have studied the polarization dependence of the resonance profiles in detail. The peak positions of the polarized and depolarized resonance profiles are not the same. When the laser is polarized along (110) or (11-bar0), we see an interference effect for some of these modes similar to that seen by Menendez and Cardona in bulk GaAs. In bulk GaAs, this interference is an intrinsic effect. In superlattices, this effect is a violation of the selection rules for confined LO modes; we attribute this ''forbidden'' scattering by confined LO modes to an impurity-induced Froehlich mechanism.

• Research Organization: Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801
• OSTI ID: 6822899
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 39:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ELECTRON-PHONON COUPLING
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
EXPERIMENTAL DATA
PHOTOLUMINESCENCE
POLARIZATION
RAMAN EFFECT
SUPERLATTICES
ULTRALOW TEMPERATURE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
GALLIUM COMPOUNDS
INFORMATION
LUMINESCENCE
NUMERICAL DATA
PNICTIDES
360204* - Ceramics
Cermets
& Refractories- Physical Properties