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Title: Built-in biaxial strain dependence of [Gamma]-[ital X] transport in GaAs/In[sub [ital x]]Al[sub 1[minus][ital x]]As/GaAs pseudomorphic heterojunction barriers ([ital x]=0, 0. 03, and 0. 06)

Abstract

The effects of built-in biaxial strain on [Gamma]-[ital X] transport in [ital n]-GaAs/[ital i]-In[sub [ital x]]Al[sub 1[minus][ital x]]As/[ital n]-GaAs pseudomorphic single-barrier structures ([ital x]=0, 0.03, and 0.06) are studied by measuring temperature-dependent [ital I]-[ital V] characteristics. For the accurate characterization of electron transport across each barrier, a self-consistent numerical model is used to analyze the experimental results. For each structure, the four barrier parameters defined from the thermionic-field-emission theory, the effective Richardson constant [ital A]*, the conduction-band offsets [Delta][ital E][sub [ital c]1,2], and a tunneling mass [ital m][sub [ital n]][sup *] are extracted by calculating the theoretical [ital I]-[ital V] characteristics and fitting them to the experimental [ital I]-[ital V]-[ital T] data. The experimentally obtained [ital X]-point conduction-band shifts with the addition of indium are compared with the theoretical results calculated based on the model-solid theory. The results indicate that the addition of indium not only splits the degenerate [ital X] minima of the In[sub [ital x]]Al[sub 1[minus][ital x]]As barrier, but also shifts the relative barrier heights of both longitudinal and transverse [ital X] valleys due to the alloy-dependent band-structure modification. The comparison between the experimental and theoretical results illustrates that the transverse [ital X] valleys are the main conductionmore » channel for the [Gamma]-[ital X] transport across In[sub [ital x]]Al[sub 1[minus][ital x]]As pseudomorphic barriers.« less

Authors:
; ;  [1]; ; ;  [2]
  1. Center for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
  2. Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185-1370 (United States)
Publication Date:
OSTI Identifier:
6820250
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics; (United States)
Additional Journal Information:
Journal Volume: 76:12; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; HETEROJUNCTIONS; STRAINS; TEMPERATURE DEPENDENCE; THERMIONIC EMISSION; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; JUNCTIONS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; 360606* - Other Materials- Physical Properties- (1992-)

Citation Formats

Yang, K, East, J R, Haddad, G I, Drummond, T J, Brennan, T M, and Hammons, B E. Built-in biaxial strain dependence of [Gamma]-[ital X] transport in GaAs/In[sub [ital x]]Al[sub 1[minus][ital x]]As/GaAs pseudomorphic heterojunction barriers ([ital x]=0, 0. 03, and 0. 06). United States: N. p., 1994. Web. doi:10.1063/1.357901.
Yang, K, East, J R, Haddad, G I, Drummond, T J, Brennan, T M, & Hammons, B E. Built-in biaxial strain dependence of [Gamma]-[ital X] transport in GaAs/In[sub [ital x]]Al[sub 1[minus][ital x]]As/GaAs pseudomorphic heterojunction barriers ([ital x]=0, 0. 03, and 0. 06). United States. https://doi.org/10.1063/1.357901
Yang, K, East, J R, Haddad, G I, Drummond, T J, Brennan, T M, and Hammons, B E. Thu . "Built-in biaxial strain dependence of [Gamma]-[ital X] transport in GaAs/In[sub [ital x]]Al[sub 1[minus][ital x]]As/GaAs pseudomorphic heterojunction barriers ([ital x]=0, 0. 03, and 0. 06)". United States. https://doi.org/10.1063/1.357901.
@article{osti_6820250,
title = {Built-in biaxial strain dependence of [Gamma]-[ital X] transport in GaAs/In[sub [ital x]]Al[sub 1[minus][ital x]]As/GaAs pseudomorphic heterojunction barriers ([ital x]=0, 0. 03, and 0. 06)},
author = {Yang, K and East, J R and Haddad, G I and Drummond, T J and Brennan, T M and Hammons, B E},
abstractNote = {The effects of built-in biaxial strain on [Gamma]-[ital X] transport in [ital n]-GaAs/[ital i]-In[sub [ital x]]Al[sub 1[minus][ital x]]As/[ital n]-GaAs pseudomorphic single-barrier structures ([ital x]=0, 0.03, and 0.06) are studied by measuring temperature-dependent [ital I]-[ital V] characteristics. For the accurate characterization of electron transport across each barrier, a self-consistent numerical model is used to analyze the experimental results. For each structure, the four barrier parameters defined from the thermionic-field-emission theory, the effective Richardson constant [ital A]*, the conduction-band offsets [Delta][ital E][sub [ital c]1,2], and a tunneling mass [ital m][sub [ital n]][sup *] are extracted by calculating the theoretical [ital I]-[ital V] characteristics and fitting them to the experimental [ital I]-[ital V]-[ital T] data. The experimentally obtained [ital X]-point conduction-band shifts with the addition of indium are compared with the theoretical results calculated based on the model-solid theory. The results indicate that the addition of indium not only splits the degenerate [ital X] minima of the In[sub [ital x]]Al[sub 1[minus][ital x]]As barrier, but also shifts the relative barrier heights of both longitudinal and transverse [ital X] valleys due to the alloy-dependent band-structure modification. The comparison between the experimental and theoretical results illustrates that the transverse [ital X] valleys are the main conduction channel for the [Gamma]-[ital X] transport across In[sub [ital x]]Al[sub 1[minus][ital x]]As pseudomorphic barriers.},
doi = {10.1063/1.357901},
url = {https://www.osti.gov/biblio/6820250}, journal = {Journal of Applied Physics; (United States)},
issn = {0021-8979},
number = ,
volume = 76:12,
place = {United States},
year = {1994},
month = {12}
}