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Title: Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

Abstract

This patent describes a method of manufacturing thin film photovoltaic cells including the steps of depositing at least first and second thin film semiconductor layers on a substrate and forming electrical contacts to the semiconductor layers. The improvement described here comprises applying a reverse bias voltage between the semiconductor layers, laser scanning the cell to selectively locate localized shorting or shunting defects therein whereby material from one of the cell components on one side of one of the thin film semiconductor layers would thereby contact a cell component on the other side at that semiconductor layer through the defect which would result in a short or shunt, and selectively thermally eliminating the defect to prevent such shorting.

Inventors:
;
Publication Date:
OSTI Identifier:
6819264
Alternate Identifier(s):
OSTI ID: 6819264
Patent Number(s):
US 4640002
Assignee:
University of Delaware, Newark, DE NOV; NOV-87-047450; EDB-87-053858
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 5 Dec 1985
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; MANUFACTURING; SERVICE LIFE; THIN FILMS; DEFECTS; ELECTRIC POTENTIAL; ELONGATION; FASTENERS; LASERS; LAYERS; OPTICAL SCANNERS; POSITIONING; SEMICONDUCTOR MATERIALS; SHAFTS; SLEEVES; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MACHINE PARTS; MATERIALS; OPTICAL EQUIPMENT; PHOTOELECTRIC CELLS 140501* -- Solar Energy Conversion-- Photovoltaic Conversion

Citation Formats

Phillips, J.E., and Lasswell, P.G.. Method and apparatus for increasing the durability and yield of thin film photovoltaic devices. United States: N. p., 1987. Web.
Phillips, J.E., & Lasswell, P.G.. Method and apparatus for increasing the durability and yield of thin film photovoltaic devices. United States.
Phillips, J.E., and Lasswell, P.G.. Tue . "Method and apparatus for increasing the durability and yield of thin film photovoltaic devices". United States.
@article{osti_6819264,
title = {Method and apparatus for increasing the durability and yield of thin film photovoltaic devices},
author = {Phillips, J.E. and Lasswell, P.G.},
abstractNote = {This patent describes a method of manufacturing thin film photovoltaic cells including the steps of depositing at least first and second thin film semiconductor layers on a substrate and forming electrical contacts to the semiconductor layers. The improvement described here comprises applying a reverse bias voltage between the semiconductor layers, laser scanning the cell to selectively locate localized shorting or shunting defects therein whereby material from one of the cell components on one side of one of the thin film semiconductor layers would thereby contact a cell component on the other side at that semiconductor layer through the defect which would result in a short or shunt, and selectively thermally eliminating the defect to prevent such shorting.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 03 00:00:00 EST 1987},
month = {Tue Feb 03 00:00:00 EST 1987}
}