Low resistivity indium--tin oxide transparent conductive films. I. Effect of introducing H sub 2 O gas or H sub 2 gas during direct current magnetron sputtering

Journal Article · Tue May 01 00:00:00 EDT 1990 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)

DOI:https://doi.org/10.1116/1.576889· OSTI ID:6818293

Ishibashi, S; Higuchi, Y; Ota, Y; Nakamura, K ^[1]

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1. Institute for Super Materials, ULVAC JAPAN, Ltd. 523 Yokota Sanbu Chiba, 289-12, Japan (JP)

When an inline sputtering system is used to make conductive transparent ITO film by the direct current (dc) magnetron sputtering method, it was found that the partial gas pressure of H{sub 2}O affected the properties of deposited films. When the substrate temperature is at or below 200 {degree}C, the control of H{sub 2}O partial gas pressure is especially important. Using room temperature substrates, an addition of 2{times}10{sup {minus}5} Torr of H{sub 2}O in the sputtering process could form ITO films with good repeatability at a low resistivity of 6.0{times}10{sup {minus}4} {Omega} cm. By adding H{sub 2}O gas, it was possible to solve the issue of increased resistivity in thicker films. The films with added H{sub 2}O gas have H element immersed into the film and have high carrier concentration. Film transmittance stayed constant with or without H{sub 2}O gas addition. Similar effect was observed by adding H{sub 2} gas instead of H{sub 2}O gas.

• OSTI ID: 6818293
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Vol. 8:3; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM OXIDES
CATHODE SPUTTERING
ELECTRIC CONDUCTIVITY
TIN OXIDES
OPACITY
SUBSTRATES
THIN FILMS
WATER VAPOR
CHALCOGENIDES
ELECTRICAL PROPERTIES
FILMS
FLUIDS
GASES
INDIUM COMPOUNDS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SPUTTERING
TIN COMPOUNDS
VAPORS
360204* - Ceramics
Cermets
& Refractories- Physical Properties