Impurity behavior during recrystallization of plastically deformed semiconductors

Journal Article · Wed Oct 01 00:00:00 EDT 1986 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:6815006

Erofeev, R S; Shcherbina, E I

This paper studies the behavior of a repeatedly deformed doped semiconducting alloy in order to determine the main reason for the change in the properties of strongly deformed material as compared with weakly deformed material. It was assumed that during repeated deformation a corresponding number of recrystallization processes should occur in the alloy, which to one extent or another will change the concentration of the defects in the newly formed grains. For the starting model material the authors selected the alloy Bi/sub 2/Te /SUB 2.4/ SE /SUB 0.6/ doped with 0.4 mass % CdCl/sub 2/, which crystallizes almost completely directly during the deformation process. It is shown that repeated deformation intensifies the phenomenon observed.

• Research Organization: All-Union Sci-Res. Design Construction... Institute
• OSTI ID: 6815006
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 22:5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH SELENIDES
ELECTRIC CONDUCTIVITY
IMPURITIES
RECRYSTALLIZATION
BISMUTH TELLURIDES
CADMIUM
METALLURGICAL EFFECTS
ANNEALING
CADMIUM CHLORIDES
CARRIER MOBILITY
CRYSTAL DOPING
DEFORMATION
DOPED MATERIALS
ELECTROMOTIVE FORCE
EXTRUSION
HOT PRESSING
MICROSTRUCTURE
THERMOELECTRIC PROPERTIES
VACANCIES
BISMUTH COMPOUNDS
CADMIUM COMPOUNDS
CADMIUM HALIDES
CHALCOGENIDES
CHLORIDES
CHLORINE COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
MATERIALS
MATERIALS WORKING
METALS
MOBILITY
PHYSICAL PROPERTIES
POINT DEFECTS
PRESSING
SELENIDES
SELENIUM COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
360602* - Other Materials- Structure & Phase Studies
360603 - Materials- Properties