Resonant two-phonon Raman scattering in GaAs: A sensitive probe for implantation damage and annealing

Journal Article · Mon Mar 16 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98065· OSTI ID:6814636

Wagner, J; Hoffman, C

We have used resonant Raman scattering by two longitudinal optical (LO) phonons in GaAs to probe ion implantation induced damage and its annealing. It was found that the strength of the two-LO phonon peak is very sensitive to ion bombardment induced damage as demonstrated by the change in the Raman spectrum after sputtering with low-energy Ar ions. For the study of ion implanted and thermally annealed material the two-LO phonon scattering is more sensitive to the lattice perfection than the first-order Raman spectrum especially in the region where electrical activation of the dopant sets in. Spatially resolved Raman spectroscopy revealed considerable variations of the crystalline perfection across the annealed sample. The latter study was particularly facilitated by using optical multichannel detection.

• Research Organization: Fraunhofer-Institut fuer Angewandte Festkoerperphysik, Eckerstra US e 4, 7800 Freiburg, West Germany
• OSTI ID: 6814636
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 50:11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
ANNEALING
ARGON IONS
DAMAGE
ION IMPLANTATION
RAMAN SPECTRA
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IONS
PNICTIDES
RADIATION EFFECTS
SPECTRA
360605* - Materials- Radiation Effects