Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector

Hagberg, M; Larsson, A; Eng, S T

doi:10.1063/1.103026

Title: Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector

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Abstract

GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry--Perot laser cleaved from the same wafer. An 11% reduction in threshold current and a reduction of the far-field angle from 4.4{degree} to 0.7{degree} was measured.

Authors:

Hagberg, M; Larsson, A; Eng, S T ^[1]

Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S-412 96 Goeteborg, Sweden (SE)

Publication Date:: Mon May 14 00:00:00 EDT 1990

OSTI Identifier:: 6813264

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters; (USA)

Additional Journal Information:: Journal Volume: 56:20; Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; LASER MIRRORS; EFFICIENCY; FABRICATION; SEMICONDUCTOR LASERS; ALUMINIUM ARSENIDES; DESIGN; ETCHING; GALLIUM ARSENIDES; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; LASERS; MIRRORS; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SURFACE FINISHING; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats


                    Hagberg, M, Larsson, A, and Eng, S T. Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector.  United States: N. p., 1990. 
        Web.  doi:10.1063/1.103026.

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                    Hagberg, M, Larsson, A, & Eng, S T. Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector.  United States.  https://doi.org/10.1063/1.103026

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                    Hagberg, M, Larsson, A, and Eng, S T. 1990.  
        "Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector".  United States.  https://doi.org/10.1063/1.103026.

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@article{osti_6813264,

  title        = {Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector},

  author       = {Hagberg, M and Larsson, A and Eng, S T},

  abstractNote = {GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry--Perot laser cleaved from the same wafer. An 11% reduction in threshold current and a reduction of the far-field angle from 4.4{degree} to 0.7{degree} was measured.},

  doi          = {10.1063/1.103026},

  url          = {https://www.osti.gov/biblio/6813264},
  journal      = {Applied Physics Letters; (USA)},

  issn         = {0003-6951},

  number       = ,

  volume       = 56:20,

  place        = {United States},

  year         = {Mon May 14 00:00:00 EDT 1990},

  month        = {Mon May 14 00:00:00 EDT 1990}

}

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Journal Article:

https://doi.org/10.1063/1.103026

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