Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector
Abstract
GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry--Perot laser cleaved from the same wafer. An 11% reduction in threshold current and a reduction of the far-field angle from 4.4{degree} to 0.7{degree} was measured.
- Authors:
-
- Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S-412 96 Goeteborg, Sweden (SE)
- Publication Date:
- OSTI Identifier:
- 6813264
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters; (USA)
- Additional Journal Information:
- Journal Volume: 56:20; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; LASER MIRRORS; EFFICIENCY; FABRICATION; SEMICONDUCTOR LASERS; ALUMINIUM ARSENIDES; DESIGN; ETCHING; GALLIUM ARSENIDES; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; LASERS; MIRRORS; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SURFACE FINISHING; 426002* - Engineering- Lasers & Masers- (1990-)
Citation Formats
Hagberg, M, Larsson, A, and Eng, S T. Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector. United States: N. p., 1990.
Web. doi:10.1063/1.103026.
Hagberg, M, Larsson, A, & Eng, S T. Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector. United States. https://doi.org/10.1063/1.103026
Hagberg, M, Larsson, A, and Eng, S T. 1990.
"Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector". United States. https://doi.org/10.1063/1.103026.
@article{osti_6813264,
title = {Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector},
author = {Hagberg, M and Larsson, A and Eng, S T},
abstractNote = {GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry--Perot laser cleaved from the same wafer. An 11% reduction in threshold current and a reduction of the far-field angle from 4.4{degree} to 0.7{degree} was measured.},
doi = {10.1063/1.103026},
url = {https://www.osti.gov/biblio/6813264},
journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 56:20,
place = {United States},
year = {Mon May 14 00:00:00 EDT 1990},
month = {Mon May 14 00:00:00 EDT 1990}
}
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