Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes

Journal Article · Mon Feb 09 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98231· OSTI ID:6808998

Givens, M E; Mawst, L J; Zmudzinski, C A; Emanuel, M A; Coleman, J J

The device performance of graded barrier quantum well laser diodes with various buffer layer structures grown by metalorganic chemical vapor deposition has been studied. Devices having four structures (a GaAs buffer layer only, a compositionally graded buffer layer, a superlattice buffer layer, or both a graded and a superlattice buffer layer) have been characterized. In contrast with similar studies involving laser devices grown by molecular beam epitaxy, little variation in device performance is observed. These data indicate that the quality of AlGaAs-GaAs heterostructures for optical devices may be dependent on the details of the method used for the epitaxial growth of the layers.

• Research Organization: Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6808998
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 50:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
PERFORMANCE
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
SUPERLATTICES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
EPITAXY
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)