Preservation of indium phosphide substrates - The In-Sn-P melt revisited

Journal Article · Wed Oct 01 00:00:00 EDT 1986 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2108361· OSTI ID:6803916

Chin, B H; Schwartz, G P; Dautremont-Smith, W C; Dick, J R

Using Auger electron spectroscopy and secondary ion mass spectrometry, the authors have detected very high levels of tin (-- 10/sup 21//cm/sup 3/) on (100) InP substrates preserved at high temperatures (650/sup 0/-700/sup 0/C) with phosphorus vapor supplied by an In-Sn-P solution. Depth profiling through InP epilayers grown on preserved substrates, however, indicates no tin buildup at the epilayer/substrate interface. Surface studies and depth profiling of control samples reveal that the tin accumulated during preservation is restricted to the near-surface region (less than or equal to 10A) and readily dissolves into an In-P melt.

• Research Organization: AT and T Bell Labs., Murray Hill, NJ
• OSTI ID: 6803916
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 133:10, Issue 10
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
INDIUM PHOSPHIDES
AUGER ELECTRON SPECTROSCOPY
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
TIN
DEPTH
DISSOLUTION
HIGH TEMPERATURE
LAYERS
MELTING
PHOSPHORUS
SUBSTRATES
TIN PHOSPHIDES
VAPORS
CHEMICAL ANALYSIS
DIMENSIONS
ELECTRON SPECTROSCOPY
ELEMENTS
FLUIDS
GASES
INDIUM COMPOUNDS
METALS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
NONMETALS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SPECTROSCOPY
TIN COMPOUNDS
400102* - Chemical & Spectral Procedures
400101 - Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures