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Title: Atomic structure of ion-implantation produced amorphous silicon and amorphous-crystalline interface structure and kinetics

Journal Article · · Proc. - Annu. Meet., Electron Microsc. Soc. Am.; (United States)
OSTI ID:6803532

The structure of amorphous silicon determines its physical properties ranging from crystallization kinetics to efficiency of solar cells. One point of particular interest has been the existence of microcrystallites in the amorphous phase. Different crystallization kinetics were obtained for purely amorphous silicon and for amorphous silicon having a trace of crystallinity. The incorporation of dopants into substitutional sites after solid-phase crystallization was also found to be affected by the degree of amorphousness. The purpose of this investigation was two fold: first, to characterize the structure of amorphous silicon, and second to study the structure of amorphous-crystalline interface. The importance of these two factors in the crystallization phenomena is discussed.

Research Organization:
Oak Ridge National Lab., TN
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
6803532
Journal Information:
Proc. - Annu. Meet., Electron Microsc. Soc. Am.; (United States), Vol. 40
Country of Publication:
United States
Language:
English