Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

Journal Article · Tue Jun 01 00:00:00 EDT 1999 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.775519· OSTI ID:679560

Casagrande, L ^[1]; Barnett, B M ^[2]; Bartalina, P ^[3]

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1. LIP, Lisbon (Portugal)
2. Johannes-Gutenberg Univ., Mainz (Germany)
3. Univ. of Lausanne (Switzerland); and others

In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of {approximately}4 {times} 10{sup 14} p/cm{sup 2}, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.

• OSTI ID: 679560
• Report Number(s): CONF-981110-; ISSN 0018-9499; TRN: 99:009492
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 46, Issue 3Pt1; Conference: 1998 IEEE nuclear science symposium and medical imaging conference, Toronto (Canada), 10-12 Nov 1998; Other Information: PBD: Jun 1999
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
SI SEMICONDUCTOR DETECTORS
PHYSICAL RADIATION EFFECTS
PERFORMANCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
USES
AMBIENT TEMPERATURE
PASSIVATION