skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Stress releasing mechanisms in In[sub 0. 2]Ga[sub 0. 8]As layers grown on misoriented GaAs [001] substrate

Abstract

The influence of substrate misorientation on the structure and morphology of In[sub 0.2]Ga[sub 0.8]As layers grown by molecular beam epitaxy on vicinal, near (001), GaAs substrates was investigated by transmission electron microscopy. The substrates were tilted at angles between 0[degree] and 10[degree] in [l angle]100[r angle], [l angle]110[r angle], and [l angle]120[r angle] directions. In layers which exceeded the critical thickness, networks of 60[degree] dislocations running along the intersections of the four [l brace]111[r brace] planes with the interface were observed. Growth uniformity and anisotropy of strain relaxation were shown to depend on the type of growth steps introduced by a particular tilting direction.

Authors:
; ; ; ;  [1]; ;  [2]
  1. Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
Publication Date:
OSTI Identifier:
6785742
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (United States)
Additional Journal Information:
Journal Volume: 62:22; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; INDIUM ARSENIDES; DISLOCATIONS; INTERFACES; MORPHOLOGY; ORIENTATION; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LINE DEFECTS; MICROSCOPY; PNICTIDES; RELAXATION; 360601* - Other Materials- Preparation & Manufacture; 360602 - Other Materials- Structure & Phase Studies

Citation Formats

Werner, P, Zakharov, N D, Chen, Y, Liliental-Weber, Z, Washburn, J, Klem, J F, and Tsao, J Y. Stress releasing mechanisms in In[sub 0. 2]Ga[sub 0. 8]As layers grown on misoriented GaAs [001] substrate. United States: N. p., 1993. Web. doi:10.1063/1.109213.
Werner, P, Zakharov, N D, Chen, Y, Liliental-Weber, Z, Washburn, J, Klem, J F, & Tsao, J Y. Stress releasing mechanisms in In[sub 0. 2]Ga[sub 0. 8]As layers grown on misoriented GaAs [001] substrate. United States. https://doi.org/10.1063/1.109213
Werner, P, Zakharov, N D, Chen, Y, Liliental-Weber, Z, Washburn, J, Klem, J F, and Tsao, J Y. 1993. "Stress releasing mechanisms in In[sub 0. 2]Ga[sub 0. 8]As layers grown on misoriented GaAs [001] substrate". United States. https://doi.org/10.1063/1.109213.
@article{osti_6785742,
title = {Stress releasing mechanisms in In[sub 0. 2]Ga[sub 0. 8]As layers grown on misoriented GaAs [001] substrate},
author = {Werner, P and Zakharov, N D and Chen, Y and Liliental-Weber, Z and Washburn, J and Klem, J F and Tsao, J Y},
abstractNote = {The influence of substrate misorientation on the structure and morphology of In[sub 0.2]Ga[sub 0.8]As layers grown by molecular beam epitaxy on vicinal, near (001), GaAs substrates was investigated by transmission electron microscopy. The substrates were tilted at angles between 0[degree] and 10[degree] in [l angle]100[r angle], [l angle]110[r angle], and [l angle]120[r angle] directions. In layers which exceeded the critical thickness, networks of 60[degree] dislocations running along the intersections of the four [l brace]111[r brace] planes with the interface were observed. Growth uniformity and anisotropy of strain relaxation were shown to depend on the type of growth steps introduced by a particular tilting direction.},
doi = {10.1063/1.109213},
url = {https://www.osti.gov/biblio/6785742}, journal = {Applied Physics Letters; (United States)},
issn = {0003-6951},
number = ,
volume = 62:22,
place = {United States},
year = {Mon May 31 00:00:00 EDT 1993},
month = {Mon May 31 00:00:00 EDT 1993}
}