Beam pattern control system for an ion implanter
Patent
·
OSTI ID:6785037
This patent describes an improvement in an ion implanter. It comprises: comprising a vacuum chamber, wafer-receiving support means within the vacuum chamber, means for directing an ion beam onto a wafer received on the support means, and a first aperture plate having a beam defining aperture formed therein positioned to intercept the beam upstream of the support means. The improvement is in that the aperture formed in the aperture plate is elliptical.
- Assignee:
- Eaton Corp., Cleveland, OH (USA)
- Patent Number(s):
- US 4943728; A
- Application Number:
- PPN: US s 7-317225; TRN: 90-029934
- OSTI ID:
- 6785037
- Resource Relation:
- Patent File Date: 28 Feb 1989
- Country of Publication:
- United States
- Language:
- English
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