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Title: Dependence of silver distributions in electron-beam-exposed regions on dosage as well as on the thicknesses of dry-sensitized layers and chalcogenide glass films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.341275· OSTI ID:6780453

When a chalcogenide glass film of composition As/sub 10/Ge/sub 22.5/Se/sub 67.5/ is sensitized with evaporated silver selenide and is exposed to an electron beam, it is suggested that, as is the case for photodoping, silver will migrate from the unexposed region into the exposed one. This results in different silver distributions in the exposed regions. The distribution has been found, for the first time, to depend on various factors other than dosage, namely, the thicknesses of sensitized layers and glass films, and the size of the exposed region. Moreover, the form of the distribution is affected by the thickness of the sensitized layer but not that of the glass film, while it is not the thickness of the sensitized layer but that of the glass film which has an effect on the rate of change of silver concentration at the periphery or at the center versus dosage. By considering the amount of silver selenide remaining on the top of the exposed region, and by further assuming that silver diffusivity in the doped region is small when its concentration is low and that it will increase as the concentration is sufficiently large, one may be able to qualitatively explain the dependence of the distribution on the thickness of the sensitized layer.

Research Organization:
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113, Japan
OSTI ID:
6780453
Journal Information:
J. Appl. Phys.; (United States), Vol. 64:9
Country of Publication:
United States
Language:
English