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Title: Thermal decomposition of silane to form hydrogenated amorphous Si film

Abstract

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700-2300/sup 0/C, and preferably in a vacuum of about 10-8 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

Inventors:
; ; ; ;
Publication Date:
OSTI Identifier:
6776939
Patent Number(s):
US 4237151
Assignee:
Department of Energy
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 26 Jun 1979; Other Information: PAT-APPL-052278
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; PRODUCTION; AMORPHOUS STATE; DEPOSITION; HIGH VACUUM; PYROLYSIS; SILANES; VERY HIGH TEMPERATURE; CHEMICAL REACTIONS; DECOMPOSITION; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; THERMOCHEMICAL PROCESSES; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Ghosh, A K, Lutz, H A, Rock, E B, Strongin, M, and Wiesmann, H J. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States: N. p., 1980. Web.
Ghosh, A K, Lutz, H A, Rock, E B, Strongin, M, & Wiesmann, H J. Thermal decomposition of silane to form hydrogenated amorphous Si film. United States.
Ghosh, A K, Lutz, H A, Rock, E B, Strongin, M, and Wiesmann, H J. Tue . "Thermal decomposition of silane to form hydrogenated amorphous Si film". United States.
@article{osti_6776939,
title = {Thermal decomposition of silane to form hydrogenated amorphous Si film},
author = {Ghosh, A K and Lutz, H A and Rock, E B and Strongin, M and Wiesmann, H J},
abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700-2300/sup 0/C, and preferably in a vacuum of about 10-8 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.},
doi = {},
url = {https://www.osti.gov/biblio/6776939}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {12}
}