Short-wavelength (approx. <6400 A) room-temperature continuous operation of p-n In/sub 0. 5/(Al/sub x/Ga/sub 1//sub -//sub x/)/sub 0. 5/P quantum well lasers

Journal Article · Mon Nov 07 00:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100388· OSTI ID:6772529

Dallesasse, J M; Nam, D W; Deppe, D G; Jr, Holonyak N; Fletcher, R M; Kuo, C P; Osentowski, T D; Craford, M G

Data are presented demonstrating short-wavelength (approx. <6400 A) continuous (cw) laser operation of p-n diode In/sub 0.5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0.5/P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30 /sup 0/C to room temperature (RTapprox. =300 K, lambdaapprox. =6395 A) the threshold current density changes from 2.3 x 10/sup 3/ A/cm/sup 2/ (-30 /sup 0/C) to 3.7 x 10/sup 3/ A/cm/sup 2/ (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7 x 10/sup 3/ W/cm/sup 2/, J/sub eq/approx.2.9 x 10/sup 3/ A/cm/sup 2/) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6772529
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 53:19
• Country of Publication: United States
• Language: English

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INDIUM PHOSPHIDES
MEDIUM TEMPERATURE
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