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Title: High-efficiency thin-film polycrystalline-silicon solar cells

Abstract

The deposition of a silicon film containing a p-n junction on a metallurgical silicon substrate has been used for the preparation of thin-film silicon solar cells. The substrate was prepared by the unidirectional solidification of purified metallurgical silicon on a graphite plate, and the silicon film was deposited by the thermal reduction of trichlorosilane with hydrogen containing appropriate dopants. Solar cells of the p/sup +//n/n/sup +/-metallurgical silicon/graphite configuration have been prepared, and the AM1 efficiencies of 9--10 cm/sup 2/ area cells are up to 9.5%

Authors:
; ; ;
Publication Date:
Research Org.:
Southern Methodist University, Dallas, Texas 75275
OSTI Identifier:
6767352
Alternate Identifier(s):
OSTI ID: 6767352
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 50:2
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON; FABRICATION; SILICON SOLAR CELLS; EFFICIENCY; DEPOSITION; FILMS; P-N JUNCTIONS; DIRECT ENERGY CONVERTERS; ELEMENTS; JUNCTIONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SOLAR CELLS 140501* -- Solar Energy Conversion-- Photovoltaic Conversion

Citation Formats

Chu, T.L., Chu, S.S., Lin, C.L., and Abderrassoul, R. High-efficiency thin-film polycrystalline-silicon solar cells. United States: N. p., 1979. Web. doi:10.1063/1.326011.
Chu, T.L., Chu, S.S., Lin, C.L., & Abderrassoul, R. High-efficiency thin-film polycrystalline-silicon solar cells. United States. doi:10.1063/1.326011.
Chu, T.L., Chu, S.S., Lin, C.L., and Abderrassoul, R. Thu . "High-efficiency thin-film polycrystalline-silicon solar cells". United States. doi:10.1063/1.326011.
@article{osti_6767352,
title = {High-efficiency thin-film polycrystalline-silicon solar cells},
author = {Chu, T.L. and Chu, S.S. and Lin, C.L. and Abderrassoul, R.},
abstractNote = {The deposition of a silicon film containing a p-n junction on a metallurgical silicon substrate has been used for the preparation of thin-film silicon solar cells. The substrate was prepared by the unidirectional solidification of purified metallurgical silicon on a graphite plate, and the silicon film was deposited by the thermal reduction of trichlorosilane with hydrogen containing appropriate dopants. Solar cells of the p/sup +//n/n/sup +/-metallurgical silicon/graphite configuration have been prepared, and the AM1 efficiencies of 9--10 cm/sup 2/ area cells are up to 9.5%},
doi = {10.1063/1.326011},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 50:2,
place = {United States},
year = {1979},
month = {2}
}