High-efficiency thin-film polycrystalline-silicon solar cells

Journal Article · Thu Feb 01 00:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326011· OSTI ID:6767352

Chu, T L; Chu, S S; Lin, C L; Abderrassoul, R

The deposition of a silicon film containing a p-n junction on a metallurgical silicon substrate has been used for the preparation of thin-film silicon solar cells. The substrate was prepared by the unidirectional solidification of purified metallurgical silicon on a graphite plate, and the silicon film was deposited by the thermal reduction of trichlorosilane with hydrogen containing appropriate dopants. Solar cells of the p/sup +//n/n/sup +/-metallurgical silicon/graphite configuration have been prepared, and the AM1 efficiencies of 9--10 cm/sup 2/ area cells are up to 9.5%

• Research Organization: Southern Methodist University, Dallas, Texas 75275
• OSTI ID: 6767352
• Journal Information: J. Appl. Phys.; (United States), Vol. 50:2
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
FABRICATION
SILICON SOLAR CELLS
EFFICIENCY
DEPOSITION
FILMS
P-N JUNCTIONS
DIRECT ENERGY CONVERTERS
ELEMENTS
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SOLAR CELLS
140501* - Solar Energy Conversion- Photovoltaic Conversion