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Title: Vapor-grown InGaP/GaAs solar cells

Abstract

GaAs solar cells with conversion efficiencies as high as 14% at AM1 have been grown by the GaCl/AsH/sub 3/ hydride technique. Thin (approx.200 A) layers of InGaP were used to passivate the GaAs top surface. We observe a 70-fold increase in photoluminescence intensity of the GaAs after passivation, which is consistent with a lowering of the GaAs surface recombination velocity from >10/sup 6/ to <10/sup 4/ cm/sec. Short-circuit current densities (J/sub sc/) as high as 22 mA/cm/sup 2/ and open-circuit voltages as high as 0.96 V were observed. (If achieved together, those values would yield an efficiency of almost 18%.) V/sub oc/ was observed to increase directly with p-layer thickness (t), whereas J/sub sc/ decreased directly with t. The efficiency also increased as the zinc doping was decreased.

Authors:
; ;
Publication Date:
Research Org.:
RCA Laboratories, Princeton, New Jersey 08540
OSTI Identifier:
6748495
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.; (United States)
Additional Journal Information:
Journal Volume: 33:7
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; GALLIUM ARSENIDE SOLAR CELLS; EFFICIENCY; FABRICATION; PHOTOLUMINESCENCE; RECOMBINATION; SOLAR ENERGY CONVERSION; CONVERSION; DIRECT ENERGY CONVERTERS; ENERGY CONVERSION; LUMINESCENCE; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Olsen, G, Ettenberg, M, and D'Aiello, R V. Vapor-grown InGaP/GaAs solar cells. United States: N. p., 1978. Web. doi:10.1063/1.90477.
Olsen, G, Ettenberg, M, & D'Aiello, R V. Vapor-grown InGaP/GaAs solar cells. United States. doi:10.1063/1.90477.
Olsen, G, Ettenberg, M, and D'Aiello, R V. Sun . "Vapor-grown InGaP/GaAs solar cells". United States. doi:10.1063/1.90477.
@article{osti_6748495,
title = {Vapor-grown InGaP/GaAs solar cells},
author = {Olsen, G and Ettenberg, M and D'Aiello, R V},
abstractNote = {GaAs solar cells with conversion efficiencies as high as 14% at AM1 have been grown by the GaCl/AsH/sub 3/ hydride technique. Thin (approx.200 A) layers of InGaP were used to passivate the GaAs top surface. We observe a 70-fold increase in photoluminescence intensity of the GaAs after passivation, which is consistent with a lowering of the GaAs surface recombination velocity from >10/sup 6/ to <10/sup 4/ cm/sec. Short-circuit current densities (J/sub sc/) as high as 22 mA/cm/sup 2/ and open-circuit voltages as high as 0.96 V were observed. (If achieved together, those values would yield an efficiency of almost 18%.) V/sub oc/ was observed to increase directly with p-layer thickness (t), whereas J/sub sc/ decreased directly with t. The efficiency also increased as the zinc doping was decreased.},
doi = {10.1063/1.90477},
journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 33:7,
place = {United States},
year = {1978},
month = {10}
}