Characteristics of lift-off fabricated AlGaAs/InGaAs single-strained-quantum-well structures on glass and silicon substrates

Conference · Fri Jan 01 00:00:00 EST 1988

OSTI ID:6743656

Klem, J F; Jones, E D; Myers, D R; Lott, J A

A technique involving the liftoff of thin (/approx/1 /mu/m) III-V structures grown on GaAs substrates and subsequent bonding to glass or SiO/sub 2/-covered Si substrates has been investigated. AlGaAs/InGaAs/GaAs single-strained-quantum-well structures have been grown by molecular beam epitaxy and characterized before and after lift-off and bonding to foreign substrates. X-ray diffraction measurements were performed to determine the strain state of the films over a wide temperature range after bonding. Low-temperature photoluminescence measurements on 125/angstrom/-well undoped structures show that the narrow linewidths observed in the as-grown samples (/approx/4 MeV) are not broadened by the lift-off and bonding process. Room- and low-temperature dc measurements made on modulation-doped field-effect transistors show that electronic transport properties are not adversely affected by this process. 8 refs., 6 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6743656
• Report Number(s): SAND-88-2588C; CONF-8809152-4; ON: DE89001374
• Resource Relation: Conference: International symposium on gallium-arsenide and related compounds, Atlanta, GA, USA, 11 Sep 1988; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
BONDING
GALLIUM ARSENIDES
INDIUM ARSENIDES
FILMS
GLASS
HYSTERESIS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
THERMAL EXPANSION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
EPITAXY
EXPANSION
FABRICATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JOINING
LUMINESCENCE
MATERIALS
PNICTIDES
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture
360603 - Materials- Properties