skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth, nitrogen vacancy reduction and solid solution formation in cubic GaN thin films and the subsequent fabrication of superlattice structures using AlN and inn. Final report, 1 June 1986-31 December 1992

Abstract

An atomic layer epitaxy deposition system configured for the growth of thin films of the III-V nitrides of A1, Ga and In has been designed, constructed and commissioned. The system allows the introduction of up to 16 gases without mixing. Self-terminating growth of crystalline GaN films has been achieved on single crystal wafers of (0001) alpha(6H)-SiC. Results of analyses via Auger spectroscopy, electron microscopy and electron diffraction are described. Deposition of AIN and GaN via gas-source MBE was also continued during this period. The principal emphasis concerned the initial stages of growth of both compounds on the substrates of (00001) alpha(6H)-SiC and (0001) sapphire, as determined using X-ray photoelectron spectroscopy. An initial layer of silicon nitride formed on the surface of SiC prior to the deposition of either nitride. The deposition of GaN on sapphire followed the Stranski-Krastanov mode of nucleation and growth, while on SiC, characteristics of three-dimensional growth were evident. By contrast, AlN grew initially in a layer-by-layer mode. Deposition of GaN on vicinal (100) Beta-SiC during UV irradiation resulted in the formation of a new 4H polytype of this material. Deposition of BN via gas-source MBE on Cu(110) resulted in nanocrystalline cBN; films grown on (111) Cumore » resulted in h-BN (graphitic phase). Similar studies using Si(100) substrates also resulted in the occurrence of cBN. The occurrence of the cubic polytype was enhanced while that of h-BN was discouraged with the use of the UV light at 400-500 deg C.« less

Authors:
Publication Date:
Research Org.:
North Carolina State Univ., Raleigh, NC (United States)
OSTI Identifier:
6727852
Report Number(s):
AD-A-258804/4/XAB
CNN: N00014-86-K-0686
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; MOLECULAR BEAM EPITAXY; GALLIUM NITRIDES; INDIUM NITRIDES; THIN FILMS; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; BORON NITRIDES; DEPOSITION; GASES; MONOCRYSTALS; NUCLEATION; PHOTOLUMINESCENCE; SAPPHIRE; SILICON CARBIDES; SILICON NITRIDES; SOLID SOLUTIONS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTRA; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; CORUNDUM; CRYSTALS; DIFFRACTION; DISPERSIONS; ELECTRON SPECTROSCOPY; EPITAXY; FILMS; FLUIDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; MINERALS; MIXTURES; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; PNICTIDES; SCATTERING; SILICON COMPOUNDS; SOLUTIONS; SPECTRA; SPECTROSCOPY; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Davis, R F. Growth, nitrogen vacancy reduction and solid solution formation in cubic GaN thin films and the subsequent fabrication of superlattice structures using AlN and inn. Final report, 1 June 1986-31 December 1992. United States: N. p., 1992. Web.
Davis, R F. Growth, nitrogen vacancy reduction and solid solution formation in cubic GaN thin films and the subsequent fabrication of superlattice structures using AlN and inn. Final report, 1 June 1986-31 December 1992. United States.
Davis, R F. Tue . "Growth, nitrogen vacancy reduction and solid solution formation in cubic GaN thin films and the subsequent fabrication of superlattice structures using AlN and inn. Final report, 1 June 1986-31 December 1992". United States.
@article{osti_6727852,
title = {Growth, nitrogen vacancy reduction and solid solution formation in cubic GaN thin films and the subsequent fabrication of superlattice structures using AlN and inn. Final report, 1 June 1986-31 December 1992},
author = {Davis, R F},
abstractNote = {An atomic layer epitaxy deposition system configured for the growth of thin films of the III-V nitrides of A1, Ga and In has been designed, constructed and commissioned. The system allows the introduction of up to 16 gases without mixing. Self-terminating growth of crystalline GaN films has been achieved on single crystal wafers of (0001) alpha(6H)-SiC. Results of analyses via Auger spectroscopy, electron microscopy and electron diffraction are described. Deposition of AIN and GaN via gas-source MBE was also continued during this period. The principal emphasis concerned the initial stages of growth of both compounds on the substrates of (00001) alpha(6H)-SiC and (0001) sapphire, as determined using X-ray photoelectron spectroscopy. An initial layer of silicon nitride formed on the surface of SiC prior to the deposition of either nitride. The deposition of GaN on sapphire followed the Stranski-Krastanov mode of nucleation and growth, while on SiC, characteristics of three-dimensional growth were evident. By contrast, AlN grew initially in a layer-by-layer mode. Deposition of GaN on vicinal (100) Beta-SiC during UV irradiation resulted in the formation of a new 4H polytype of this material. Deposition of BN via gas-source MBE on Cu(110) resulted in nanocrystalline cBN; films grown on (111) Cu resulted in h-BN (graphitic phase). Similar studies using Si(100) substrates also resulted in the occurrence of cBN. The occurrence of the cubic polytype was enhanced while that of h-BN was discouraged with the use of the UV light at 400-500 deg C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {12}
}

Technical Report:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that may hold this item. Keep in mind that many technical reports are not cataloged in WorldCat.

Save / Share: