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Title: Method for determining emitter recombination in Si solar cells using open-circuit voltage decay

Abstract

A method for determining the emitter recombination current and thereby partitioning the total carrier recombination current into the different sections of a silicon solar cell is demonstrated. The method is destructive, requiring that a set of measurements is made on a cell before and after mechanically roughening the back of the cell. The data include short-circuit current (J/sub sc/), open-circuit voltage (V/sub oc/), and asymptotic decay rates for J/sub sc/ and V/sub oc/. High open-circuit voltage (650 mV) silicon cells are studied using the technique. It is shown that the emitter recombination current is large (1.5 x 10/sup -13/ A/cm/sup 2/), which is consistent with a band-gap narrowing mechanism. Furthermore, the high voltages are shown to result from unusually long base lifetimes (>300 ..mu..s) in 0.3-..cap omega.. cm silicon.

Authors:
;
Publication Date:
Research Org.:
Sandia National Laboratories, Albuquerque, New Mexico 87185
OSTI Identifier:
6721047
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.; (United States)
Additional Journal Information:
Journal Volume: 45:3
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; CHARGE CARRIERS; ELECTRIC CURRENTS; RECOMBINATION; ELECTRIC POTENTIAL; CURRENTS; DIRECT ENERGY CONVERTERS; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Rose, B H, and Weaver, H T. Method for determining emitter recombination in Si solar cells using open-circuit voltage decay. United States: N. p., 1984. Web. doi:10.1063/1.95199.
Rose, B H, & Weaver, H T. Method for determining emitter recombination in Si solar cells using open-circuit voltage decay. United States. doi:10.1063/1.95199.
Rose, B H, and Weaver, H T. Wed . "Method for determining emitter recombination in Si solar cells using open-circuit voltage decay". United States. doi:10.1063/1.95199.
@article{osti_6721047,
title = {Method for determining emitter recombination in Si solar cells using open-circuit voltage decay},
author = {Rose, B H and Weaver, H T},
abstractNote = {A method for determining the emitter recombination current and thereby partitioning the total carrier recombination current into the different sections of a silicon solar cell is demonstrated. The method is destructive, requiring that a set of measurements is made on a cell before and after mechanically roughening the back of the cell. The data include short-circuit current (J/sub sc/), open-circuit voltage (V/sub oc/), and asymptotic decay rates for J/sub sc/ and V/sub oc/. High open-circuit voltage (650 mV) silicon cells are studied using the technique. It is shown that the emitter recombination current is large (1.5 x 10/sup -13/ A/cm/sup 2/), which is consistent with a band-gap narrowing mechanism. Furthermore, the high voltages are shown to result from unusually long base lifetimes (>300 ..mu..s) in 0.3-..cap omega.. cm silicon.},
doi = {10.1063/1.95199},
journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 45:3,
place = {United States},
year = {1984},
month = {8}
}