Polysilicon photoconductor for integrated circuits

Patent · Thu Jan 21 00:00:00 EST 1988

OSTI ID:6719114

Hammond, R B; Bowman, D R

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: W-7405-ENG-36
• Assignee: Dept. of Energy
• Patent Number(s): 4,821,091
• Application Number: 07/147,130
• OSTI ID: 6719114
• Resource Relation: Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
INTEGRATED CIRCUITS
PHOTOCONDUCTORS
SILICON
CHEMICAL VAPOR DEPOSITION
PHYSICAL RADIATION EFFECTS
ION IMPLANTATION
POLYCRYSTALS
PRODUCTION
CHEMICAL COATING
CRYSTALS
DEPOSITION
ELECTRONIC CIRCUITS
ELEMENTS
MICROELECTRONIC CIRCUITS
RADIATION EFFECTS
SEMIMETALS
SURFACE COATING
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360605 - Materials- Radiation Effects