Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals
This patent describes an apparatus for crucible-free growth of a sheet crystal of silicon, the apparatus comprising; means for providing a substantially enclosed space having an inert atmosphere; heating means for sequentially forming molten silicon from a source of substantially pure silicon within the space; means for vertically feeding a silicon source toward the heating means to form a molten layer of silicon at a top of the source; means for drawing a continuous silicon sheet crystal from the molten silicon layer within the space; wherein a meniscus of molten silicon is created by the drawing means. The apparatus includes means to control the shape of the meniscus, and the controlling means includes a repulsive RF generator for repulsive support of the meniscus as a molten silicon sheet crystal is drawn from the molten silicon. A crucible-free, non-dendritic growth method is described for continuously forming a silicon crystal sheet from a rod of substantially pure silicon, the method comprising: employing an RF heating means having first and second portions to provide a molten layer at an end of the silicon rod in an inert atmosphere by actively heating a first region at the end of the silicon rod while preventing an active heating of a second region of the end of the silicon rod.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4650541
- OSTI ID:
- 6717476
- Resource Relation:
- Patent File Date: Filed date 12 Sep 1984
- Country of Publication:
- United States
- Language:
- English
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