The structure and electrical properties of metal contacts on GaAs

Conference · Thu Jan 01 00:00:00 EST 1987

OSTI ID:6717323

Liliental-Weber, Z

This paper reports a study of the structural and analytical properties of Au and Al contacts on GaAs and their change in the range of temperatures where the Schottky barrier height changed. The annealing of Au contacts above 290/sup 0/C caused the Schottky barrier height to decrease, an effect opposite to that of Al, where the Schottky barrier height increased upon annealing. An increase in As in the GaAs under the as-deposited metal was consistently found in both cases, whereas annealing seems to change the As/Ga ratio in an opposite way for Au and Al. The orientation relationship of the Au contacts changed upon annealing, which was not observed with the annealed Al. The orientation relationship depended strongly on the surface preparation before the metal deposition and on the annealing environment. It was proposed that the presence of As at the interface can determine the orientation relationship between metals and GaAs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6717323
• Report Number(s): LBL-23016; CONF-870167-1; ON: DE87008217
• Resource Relation: Conference: Conference on physics and chemistry of semiconductor interfaces, Salt Lake City, UT, USA, 27 Jan 1987; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
GALLIUM ARSENIDES
ELECTRIC CONTACTS
SCHOTTKY BARRIER DIODES
ALUMINIUM
ANNEALING
ELECTRON MICROSCOPY
GOLD
INTERFACES
SURFACE TREATMENTS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
GALLIUM COMPOUNDS
HEAT TREATMENTS
METALS
MICROSCOPY
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENTS
360603* - Materials- Properties
420800 - Engineering- Electronic Circuits & Devices- (-1989)