skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electronic-structure calculation of the hole-carrier-density distribution in Bi[sub 2]Sr[sub 2]CuO[sub 6], Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], and Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10] superconductors

Abstract

Results of electronic structure calculations for the hole density in the two-dimensional CuO[sub 2] planes are presented in this paper for the three bismuth cuprate superconductors Bi[sub 2]Sr[sub 2]CuO[sub 6], Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], and Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10]. The hole density in these compounds arises due to electron transfer from the CuO[sub 2] planes to the Bi-O layers. Our calculations show that Bi[sub 2]Sr[sub 2]CuO[sub 6] is so highly overdoped that it is really a metal and at the limit of superconductivity. Also Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8] has a hole density which is higher than is required for a maximum value of [ital T][sub [ital c]]. On the other hand, the hole density in the three-layer compound Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10] is nearly optimum, which indicates that apart from the number of layers, an optimum value of the hole density is important for maximizing [ital T][sub [ital c]]. The hole densities in the two types of CuO[sub 2] layers in this compound are nearly equal although the central layer has a slightly lower value. As the number of CuO[sub 2] planes increases in this family of superconductors the total amount of hole carriermore » density per chemical formula increases due to an enhanced electron transfer to the Bi-O layers. However, this increase is small so that the hole density per CuO[sub 2] drops rapidly as the number of CuO[sub 2] planes increases.« less

Authors:
 [1];  [2]
  1. (Section de Recherches de Metallurgie Physique, Centre d'Etudes Nucleaires de Saclay, 91191 Gif-sur-Yvette Cedex (France))
  2. (Institut des Sciences des Materiaux, Universite de Paris-Sud, Batiment 415, 91405 Orsay (France))
Publication Date:
OSTI Identifier:
6716052
Alternate Identifier(s):
OSTI ID: 6716052
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review, B: Condensed Matter; (United States); Journal Volume: 49:18
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH OXIDES; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; HOLES; CALCIUM OXIDES; CUPRATES; STRONTIUM OXIDES; CARRIER DENSITY; ELECTRON TRANSFER; TRANSITION TEMPERATURE; VALENCE; ALKALINE EARTH METAL COMPOUNDS; BISMUTH COMPOUNDS; CALCIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; STRONTIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS 360207* -- Ceramics, Cermets, & Refractories-- Superconducting Properties-- (1992-)

Citation Formats

Gupta, R.P., and Gupta, M. Electronic-structure calculation of the hole-carrier-density distribution in Bi[sub 2]Sr[sub 2]CuO[sub 6], Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], and Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10] superconductors. United States: N. p., 1994. Web. doi:10.1103/PhysRevB.49.13154.
Gupta, R.P., & Gupta, M. Electronic-structure calculation of the hole-carrier-density distribution in Bi[sub 2]Sr[sub 2]CuO[sub 6], Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], and Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10] superconductors. United States. doi:10.1103/PhysRevB.49.13154.
Gupta, R.P., and Gupta, M. Sun . "Electronic-structure calculation of the hole-carrier-density distribution in Bi[sub 2]Sr[sub 2]CuO[sub 6], Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], and Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10] superconductors". United States. doi:10.1103/PhysRevB.49.13154.
@article{osti_6716052,
title = {Electronic-structure calculation of the hole-carrier-density distribution in Bi[sub 2]Sr[sub 2]CuO[sub 6], Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], and Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10] superconductors},
author = {Gupta, R.P. and Gupta, M.},
abstractNote = {Results of electronic structure calculations for the hole density in the two-dimensional CuO[sub 2] planes are presented in this paper for the three bismuth cuprate superconductors Bi[sub 2]Sr[sub 2]CuO[sub 6], Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], and Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10]. The hole density in these compounds arises due to electron transfer from the CuO[sub 2] planes to the Bi-O layers. Our calculations show that Bi[sub 2]Sr[sub 2]CuO[sub 6] is so highly overdoped that it is really a metal and at the limit of superconductivity. Also Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8] has a hole density which is higher than is required for a maximum value of [ital T][sub [ital c]]. On the other hand, the hole density in the three-layer compound Bi[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10] is nearly optimum, which indicates that apart from the number of layers, an optimum value of the hole density is important for maximizing [ital T][sub [ital c]]. The hole densities in the two types of CuO[sub 2] layers in this compound are nearly equal although the central layer has a slightly lower value. As the number of CuO[sub 2] planes increases in this family of superconductors the total amount of hole carrier density per chemical formula increases due to an enhanced electron transfer to the Bi-O layers. However, this increase is small so that the hole density per CuO[sub 2] drops rapidly as the number of CuO[sub 2] planes increases.},
doi = {10.1103/PhysRevB.49.13154},
journal = {Physical Review, B: Condensed Matter; (United States)},
number = ,
volume = 49:18,
place = {United States},
year = {Sun May 01 00:00:00 EDT 1994},
month = {Sun May 01 00:00:00 EDT 1994}
}