Influence of carrier migration processes on threshold characteristics of semiconductor lasers pumped longitudinally by an electron beam

Journal Article · Tue Jul 01 00:00:00 EDT 1980 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1980v010n07ABEH010341· OSTI ID:6714981

Bazhenov, S L; Bogdankevich, O V; Darznek, S A; Meerovich, G A; Ulasyuk, V N

Calculations are made of the threshold characteristics and transverse dimensions of a luminous spot for a laser pumped by a sharply focused electron beam. The calculations involve jointly solving equations for the electromagnetic field and the active particles. It is found that for small diameters of the electron beam, the excitation threshold and size of the lasing zone are governed by electron scattering during slowing down and diffusion of carriers across the resonator axis. A comparison is made of the results of these calculations with the experiment.

• Research Organization: All-Union Scientific-Research Institute of the Metrological Service, Moscow
• OSTI ID: 6714981
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Vol. 10:7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
EXCITATION
CHARGE CARRIERS
ELECTRON BEAMS
MIGRATION
BEAMS
ENERGY-LEVEL TRANSITIONS
LASERS
LEPTON BEAMS
PARTICLE BEAMS
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)