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Title: Low-energy proton detection by Pd metal-insulator-semiconductor diodes

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.341973· OSTI ID:6712417

It has been discovered that palladium-gated metal-insulator-silicon Schottky barrier diodes are very sensitive to fluxes of energetic protons in high vacuum. Data on the dosimetric response of the diodes to energetic protons are presented, along with data on the subsequent decay in the induced signal. A model for the response is developed, based on the response of similar structures to partial pressures of molecular hydrogen. The model involves adsorption sites at both the external Pd surface and the interface between Pd and SiO/sub 2/, as well as known H absorption properties of bulk Pd. The sensitivity at 300 K of our diodes is about 10/sup 9/ protons (10/sup 11/ cm/sup -2/). The inventory of protons stored in the bulk Pd, the surface, and at the interface indicates that the areal site density for the surface and interface is about 10/sup 15/ cm/sup -2/.

Research Organization:
Sandia National Laboratories, Albuquerque, New Mexico 87185
OSTI ID:
6712417
Journal Information:
J. Appl. Phys.; (United States), Vol. 64:12
Country of Publication:
United States
Language:
English

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