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Title: High speed laser driver

Abstract

This patent describes a laser driver including a first transistor having one electrode adapted to be coupled to a point of reference potential, a second electrode, and a control electrode adapted to receive input signals ranging from one voltage level to a second voltage level; a serial circuit including a laser diode having one electrode adapted to be coupled to a point of reference potential. It also includes a second electrode, a second transistor having one electrode coupled to the second electrode of the laser diode, a second electrode, and a control electrode adapted to be coupled to a bias level between the one voltage level and the second voltage level; a first resistor having one terminal adapted to be coupled to a third voltage level, and a second terminal; first means coupling the second electrode of the first transistor to the second terminal; and second means coupling the second electrode of the second transistor to the second terminal, the improvement wherein the first means includes a first high speed diode, the second means includes a second high speed diode, the transistors are of the same conductivity type, and wherein each high speed diode is a Schottky barrier diode, andmore » wherein the improvement further comprises a second resistor for coupling the second terminal of the first transistor to a fourth voltage level; and a third resistor for coupling the second terminal of the second transistor to the fourth voltage level.« less

Inventors:
;
Publication Date:
OSTI Identifier:
6711950
Patent Number(s):
US 4647792
Assignee:
GTE Labs., Inc., Waltham, MA
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 15 Jul 1985
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; LASERS; ELECTRODES; SCHOTTKY BARRIER DIODES; TRANSISTORS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRONIC CIRCUITS; PERFORMANCE; RESISTORS; SIGNALS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Meslener, G J, and Baum, P N. High speed laser driver. United States: N. p., 1987. Web.
Meslener, G J, & Baum, P N. High speed laser driver. United States.
Meslener, G J, and Baum, P N. Tue . "High speed laser driver". United States.
@article{osti_6711950,
title = {High speed laser driver},
author = {Meslener, G J and Baum, P N},
abstractNote = {This patent describes a laser driver including a first transistor having one electrode adapted to be coupled to a point of reference potential, a second electrode, and a control electrode adapted to receive input signals ranging from one voltage level to a second voltage level; a serial circuit including a laser diode having one electrode adapted to be coupled to a point of reference potential. It also includes a second electrode, a second transistor having one electrode coupled to the second electrode of the laser diode, a second electrode, and a control electrode adapted to be coupled to a bias level between the one voltage level and the second voltage level; a first resistor having one terminal adapted to be coupled to a third voltage level, and a second terminal; first means coupling the second electrode of the first transistor to the second terminal; and second means coupling the second electrode of the second transistor to the second terminal, the improvement wherein the first means includes a first high speed diode, the second means includes a second high speed diode, the transistors are of the same conductivity type, and wherein each high speed diode is a Schottky barrier diode, and wherein the improvement further comprises a second resistor for coupling the second terminal of the first transistor to a fourth voltage level; and a third resistor for coupling the second terminal of the second transistor to the fourth voltage level.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {3}
}