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Title: An improved understanding of efficiency limiting defects in polycrystalline CdTe/CdS solar cells

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
OSTI ID:6695864
; ; ;  [1]
  1. Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

Efficiency limiting mechanisms in CdTe/CdS solar cells were investigated. It was found that growth of CdTe films under tellurium rich conditions enhanced the interdiffusion between CdTe and CdS and reduced the CdTe bandgap to 1.47 eV, whereas, growth of CdTe films under Cd-rich conditions retained the CdTe bandgap at 1.5 eV. A CdCl[sub 2] treatment followed by a 400 [degree]C post-growth annealing of CdTe improved the cell performance significantly. However, it also produced defects at [ital E][sub [ital v]]+0.64 and [ital E][sub [ital v]]+0.17 eV possibly due to chlorine related complexes. An inverse correlation was found between the density of these defects and [ital V][sub oc]. Rapid thermal processing (RTP) was investigated as a variation of the conventional furnace anneal post-growth treatment. Preliminary RTP results look promising with cell efficiency in excess of 8% without any CdCl[sub 2] treatment. Further improvements are expected by optimizing the CdCl[sub 2] treatment and the RTP conditions.

OSTI ID:
6695864
Report Number(s):
CONF-9205115-; CODEN: APCPCS
Journal Information:
AIP Conference Proceedings (American Institute of Physics); (United States), Vol. 268:1; Conference: 11. review meeting of the National Renewable Energy Laboratories: photovoltaic advanced research and development, Lakewood, CO (United States), 13-15 May 1992; ISSN 0094-243X
Country of Publication:
United States
Language:
English