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Title: Imaging of surfaces and defects of crystals. Progress report, February 16, 1977--May 1, 1978

Technical Report ·
DOI:https://doi.org/10.2172/6694315· OSTI ID:6694315

Progress is reported in the evaluation and comparison of various electron optical techniques for the study of surface reactions on single-crystal materials. The principal reaction studied has been the oxidation of copper at temperatures of 400 to 800/sup 0/C in oxygen partial pressures of 10/sup -5/ torr and less using thin single crystal films of copper on solid substrates. This reaction has been followed from the initial formation of oxide nuclei (100A diameter) to the growth of oxide crystals several micrometers in diameter. New information has been provided on the mechanism of the growth of the oxide and on the diffusional processes in the surrounding copper. The techniques used have included scanning electron microscopy (including electron channelling observations), scanning reflection microscopy using diffracted beams at medium energies (a technique unique to our laboratory), medium energy (1 to 15 keV) electron diffraction, transmission electron microscopy, transmission electron diffraction, high energy reflection electron diffraction and high energy reflection electron microscopy. New methods have been developed for the preparation of thin single crystal films and bulk crystals suitable for use as specimens. Exploratory studies have been made on graphite single crystals and thin chromium films. Theoretical studies have revealed possible errors in the interpretation of diffraction patterns from small crystals on mono-crystalline supports and have shown the importance of multi-beam dynamical diffraction effects in reflection-diffraction imaging of mosaic single crystals.

Research Organization:
Arizona State Univ., Tempe (USA). Dept. of Physics
Sponsoring Organization:
USDOE
DOE Contract Number:
EY-76-S-02-2995
OSTI ID:
6694315
Report Number(s):
COO-2995-2; TRN: 78-017277
Country of Publication:
United States
Language:
English