Composition/bandgap selective dry photochemical etching of semiconductor materials
A method is described of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap E/sub g1/ in the presence of a second semiconductor material of a different composition and direct bandgap E/sub g2/, wherein E/sub g2/>E/sub g1/. The second semiconductor material is not substantially etched during the method, comprising subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons are not present, the photons being of an energy greater than E/sub g1/ but less than E/sub g2/, whereby the first semiconductor material is photochemically etched and the second material is substantially not etched.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4648938
- OSTI ID:
- 6670932
- Resource Relation:
- Patent File Date: Filed date 11 Oct 1985
- Country of Publication:
- United States
- Language:
- English
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