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Title: Effect of boron doping on the surfaces of diamond thin films

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
DOI:https://doi.org/10.1116/1.578773· OSTI ID:6668875
; ;  [1]
  1. Microelectronics Research Center, Iowa State University, Ames, Iowa 50011 (United States)

Auger and electron energy loss spectroscopies were used to study chemical and structural properties of as-grown surfaces of boron-doped diamond thin films prepared by microwave plasma-assisted chemical vapor deposition. Results are compared to surface properties of as-deposited undoped diamond thin films. As the boron level in the film increased energy losses associated with [pi] electron bonds ([ital sp][sup 2] sites) were enhanced at the surface. Similarly, the surface oxygen level of the films increased with increasing boron content. On the other hand the characteristic diamond Raman peak at 1332 cm[sup [minus]1] was narrower than in the undoped films and the broad band at about 1500 cm[sup [minus]1] associated with nondiamond carbon decreased. Surface morphology micrographs obtained from scanning electron microscopy (SEM) measurements indicated that the introduction of boron enhances the appearance of the (111) planes. Surface characterization together with the Raman and SEM results suggest that boron doping enhances surface reactivity resulting in increased adsorption of oxygen and carbonaceous species following the growth process. This behavior has implications on surface treatments necessary for device applications.

DOE Contract Number:
W-7405-ENG-82
OSTI ID:
6668875
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Vol. 11:3; ISSN 0734-2101
Country of Publication:
United States
Language:
English