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Title: Diagnostics of a glow discharge used to produce amorphous silicon films. Technical progress report, August 15, 1980-November 14, 1980

Technical Report ·
DOI:https://doi.org/10.2172/6660789· OSTI ID:6660789

Construction of the basic apparatus has been completed during this period, and many apparatus checks have been completed. Almost complete SiH/sub 4/ dissociation has been obtained in approx. 950 C ovens between the turbo and rough pumps, so that reliable, long-term operation is achieved. A base vacuum of approx. 10/sup -7/ Torr is achieved in the discharge chamber in a few hours, and approx. 10/sup -8/ overnight, so that gas-phase impurity levels as low as 10/sup -7/ are ready achievable. The SiH/sub 4/ inlet lines are entirely bakeable stainless steel and permanently closed to air, to maintain the tank purity of SiH/sub 4/. A distillation procedure to further clean the tank SiH/sub 4/ is under study. Thus we should be able to study the effects of very small, controlled levels of impurities. The discharge configurations are shown, and the ratios of Si/sub x/H/sub n//sup +/ fluxes for three types of discharges in pure SiH/sub 4/ are given. (WHK)

Research Organization:
Univ. of Colorado, Boulder, CO (United States)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6660789
Report Number(s):
SERI/PR-9053-1-T2
Country of Publication:
United States
Language:
English