Transport and junction physics of semiconductor-metal eutectic composites. Final report, 1 April 1986-31 March 1988

Technical Report · Wed Jun 01 00:00:00 EDT 1988

OSTI ID:6660501

Ditchek, B; Gustafson, J

An investigation of the transport and junction physics of Si-TaSi/sub 2/ semiconductor-metal eutectic composites has demonstrated the potential use of this class of materials in highpower switching. Following the development of single-crystal-matrix Si-TaSi/sub 2/ crystals, eutectic diodes utilizing the in-situ junctions were fabricated and analyzed using current-voltage, capacitance-voltage, and electron-beam-induced current techniques. Studies demonstrated nearly ideal diode behavior, a Schottky-barrier height of 0.62 eV, and a means of measuring the extent of the depletion zones and the carrier concentration of the semiconductor matrix. An analysis based on a comparison of the EBIC-determined carrier concentration with the Hall carrier concentration resulted in a measure of the effect of the depletion zones on composite resistivity. Building on the foundation provided by this analysis, the first eutectic-composite transistors were demonstrated. These devices confirmed that current flow can be controlled by pinching off Si channels between TaSi/sub 2/ rods. Furthermore, testing at high voltages indicated that the eutectic devices are resistant to avalanche breakdown. Devices were built that block 600 V, three times the value for a conventional planar device in a wafer of the same carrier concentration.

• Research Organization: GTE Labs., Inc., Waltham, MA (USA)
• OSTI ID: 6660501
• Report Number(s): AD-A-198480/6/XAB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
COMPOSITE MATERIALS
EUTECTICS
SEMICONDUCTOR DIODES
SEMICONDUCTOR SWITCHES
TRANSISTORS
CHARGE CARRIERS
ELECTRON BEAMS
HALL EFFECT
HEIGHT
JUNCTIONS
PROGRESS REPORT
SILICIDES
SILICON
TANTALUM COMPOUNDS
TANTALUM SILICIDES
BEAMS
DIMENSIONS
DOCUMENT TYPES
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
LEPTON BEAMS
MATERIALS
PARTICLE BEAMS
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
SWITCHES
TRANSITION ELEMENT COMPOUNDS
420200* - Engineering- Facilities
Equipment
& Techniques
360603 - Materials- Properties