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Title: Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]

Abstract

Photocreation mechanisms and properties of nitrogen dangling bonds in amorphous hydrogenated silicon nitride (a-SiN[sub x]:H) thin films are investigated. We find that the creation kinetics are strongly dependent on the post-deposition anneal; this thermal process can be described by a simple exponential function which yields an activation energy of 0.8 eV. The compositional dependence of the nitrogen dangling bond center suggests that its energy level lies close to the valence band edge, in agreement with theoretical calculations. This energy level position can explain why a-SiN[sub x]:H films often become conducting following a high post-deposition anneal.

Authors:
 [1];  [2];  [3];  [4]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center
  3. National Power, Leatherhead (United Kingdom)
  4. Army Electronics Technology and Devices Lab., Fort Monmouth, NJ (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE; USDOE, Washington, DC (United States)
OSTI Identifier:
6658049
Report Number(s):
SAND-92-2777C; CONF-921101-99
ON: DE93008341
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: 16. Material Research Society international symposium on the scientific basis for nuclear waste management fall meeting, Boston, MA (United States), 30 Nov - 5 Dec 1992
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON NITRIDES; CRYSTAL DEFECTS; AMORPHOUS STATE; ANNEALING; ELECTRON SPIN RESONANCE; HYDROGENATION; NITROGEN; THIN FILMS; ULTRAVIOLET RADIATION; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; HEAT TREATMENTS; MAGNETIC RESONANCE; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; RADIATIONS; RESONANCE; SILICON COMPOUNDS; 360204* - Ceramics, Cermets, & Refractories- Physical Properties

Citation Formats

Warren, W L, Kanicki, J, Robertson, J, and Poindexter, E H. Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]. United States: N. p., 1992. Web.
Warren, W L, Kanicki, J, Robertson, J, & Poindexter, E H. Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]. United States.
Warren, W L, Kanicki, J, Robertson, J, and Poindexter, E H. 1992. "Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]". United States.
@article{osti_6658049,
title = {Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]},
author = {Warren, W L and Kanicki, J and Robertson, J and Poindexter, E H},
abstractNote = {Photocreation mechanisms and properties of nitrogen dangling bonds in amorphous hydrogenated silicon nitride (a-SiN[sub x]:H) thin films are investigated. We find that the creation kinetics are strongly dependent on the post-deposition anneal; this thermal process can be described by a simple exponential function which yields an activation energy of 0.8 eV. The compositional dependence of the nitrogen dangling bond center suggests that its energy level lies close to the valence band edge, in agreement with theoretical calculations. This energy level position can explain why a-SiN[sub x]:H films often become conducting following a high post-deposition anneal.},
doi = {},
url = {https://www.osti.gov/biblio/6658049}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}

Conference:
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