Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]
Abstract
Photocreation mechanisms and properties of nitrogen dangling bonds in amorphous hydrogenated silicon nitride (a-SiN[sub x]:H) thin films are investigated. We find that the creation kinetics are strongly dependent on the post-deposition anneal; this thermal process can be described by a simple exponential function which yields an activation energy of 0.8 eV. The compositional dependence of the nitrogen dangling bond center suggests that its energy level lies close to the valence band edge, in agreement with theoretical calculations. This energy level position can explain why a-SiN[sub x]:H films often become conducting following a high post-deposition anneal.
- Authors:
-
- Sandia National Labs., Albuquerque, NM (United States)
- International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center
- National Power, Leatherhead (United Kingdom)
- Army Electronics Technology and Devices Lab., Fort Monmouth, NJ (United States)
- Publication Date:
- Research Org.:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE; USDOE, Washington, DC (United States)
- OSTI Identifier:
- 6658049
- Report Number(s):
- SAND-92-2777C; CONF-921101-99
ON: DE93008341
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Conference
- Resource Relation:
- Conference: 16. Material Research Society international symposium on the scientific basis for nuclear waste management fall meeting, Boston, MA (United States), 30 Nov - 5 Dec 1992
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON NITRIDES; CRYSTAL DEFECTS; AMORPHOUS STATE; ANNEALING; ELECTRON SPIN RESONANCE; HYDROGENATION; NITROGEN; THIN FILMS; ULTRAVIOLET RADIATION; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; HEAT TREATMENTS; MAGNETIC RESONANCE; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; RADIATIONS; RESONANCE; SILICON COMPOUNDS; 360204* - Ceramics, Cermets, & Refractories- Physical Properties
Citation Formats
Warren, W L, Kanicki, J, Robertson, J, and Poindexter, E H. Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]. United States: N. p., 1992.
Web.
Warren, W L, Kanicki, J, Robertson, J, & Poindexter, E H. Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]. United States.
Warren, W L, Kanicki, J, Robertson, J, and Poindexter, E H. 1992.
"Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]". United States.
@article{osti_6658049,
title = {Paramagnetic nitrogen defects in silicon nitride. [Amorphous hydrogenated SiN]},
author = {Warren, W L and Kanicki, J and Robertson, J and Poindexter, E H},
abstractNote = {Photocreation mechanisms and properties of nitrogen dangling bonds in amorphous hydrogenated silicon nitride (a-SiN[sub x]:H) thin films are investigated. We find that the creation kinetics are strongly dependent on the post-deposition anneal; this thermal process can be described by a simple exponential function which yields an activation energy of 0.8 eV. The compositional dependence of the nitrogen dangling bond center suggests that its energy level lies close to the valence band edge, in agreement with theoretical calculations. This energy level position can explain why a-SiN[sub x]:H films often become conducting following a high post-deposition anneal.},
doi = {},
url = {https://www.osti.gov/biblio/6658049},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.