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Title: Crystal growth and low coercive field 180{degree} domain switching characteristics of stoichiometric LiTaO{sub 3}

Abstract

We grew LiTaO{sub 3} single crystals with a composition close to stoichiometry by using a double crucible Czochralski method. The switching field required for 180{degree} ferroelectric domain reversal and the internal fields originating from nonstoichiometric point defects were compared for the stoichiometric and conventional commercially available crystals. The switching fields for the domain reversal in the stoichiometric crystal with a Curie temperature of 685 {degree}C was 1.7 kV/mm. This is about one thirteenth of the switching field required for the conventional LiTaO{sub 3thinsp} crystals with a Curie temperature near 600 {degree}C. The internal field in the stoichiometric crystal drastically decreased to 0.1 kV/mm. {copyright} {ital 1998 American Institute of Physics.}

Authors:
;  [1];  [2]; ;  [3]
  1. National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba 305-0044 (Japan)
  2. NGK Spark Plug Co.Ltd., 2808 Iwasaki, Komaki 485-8510 (Japan)
  3. Center for Materials Science, MS K765, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Publication Date:
OSTI Identifier:
664657
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 73; Journal Issue: 21; Other Information: PBD: Nov 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LITHIUM COMPOUNDS; LITHIUM OXIDES; TANTALATES; FERROELECTRIC MATERIALS; COERCIVE FORCE; STOICHIOMETRY; MONOCRYSTALS; CZOCHRALSKI METHOD; POINT DEFECTS; DOMAIN STRUCTURE; SWITCHES

Citation Formats

Kitamura, K, Furukawa, Y, Niwa, K, Gopalan, V, and Mitchell, T E. Crystal growth and low coercive field 180{degree} domain switching characteristics of stoichiometric LiTaO{sub 3}. United States: N. p., 1998. Web. doi:10.1063/1.122676.
Kitamura, K, Furukawa, Y, Niwa, K, Gopalan, V, & Mitchell, T E. Crystal growth and low coercive field 180{degree} domain switching characteristics of stoichiometric LiTaO{sub 3}. United States. https://doi.org/10.1063/1.122676
Kitamura, K, Furukawa, Y, Niwa, K, Gopalan, V, and Mitchell, T E. 1998. "Crystal growth and low coercive field 180{degree} domain switching characteristics of stoichiometric LiTaO{sub 3}". United States. https://doi.org/10.1063/1.122676.
@article{osti_664657,
title = {Crystal growth and low coercive field 180{degree} domain switching characteristics of stoichiometric LiTaO{sub 3}},
author = {Kitamura, K and Furukawa, Y and Niwa, K and Gopalan, V and Mitchell, T E},
abstractNote = {We grew LiTaO{sub 3} single crystals with a composition close to stoichiometry by using a double crucible Czochralski method. The switching field required for 180{degree} ferroelectric domain reversal and the internal fields originating from nonstoichiometric point defects were compared for the stoichiometric and conventional commercially available crystals. The switching fields for the domain reversal in the stoichiometric crystal with a Curie temperature of 685 {degree}C was 1.7 kV/mm. This is about one thirteenth of the switching field required for the conventional LiTaO{sub 3thinsp} crystals with a Curie temperature near 600 {degree}C. The internal field in the stoichiometric crystal drastically decreased to 0.1 kV/mm. {copyright} {ital 1998 American Institute of Physics.}},
doi = {10.1063/1.122676},
url = {https://www.osti.gov/biblio/664657}, journal = {Applied Physics Letters},
number = 21,
volume = 73,
place = {United States},
year = {Sun Nov 01 00:00:00 EST 1998},
month = {Sun Nov 01 00:00:00 EST 1998}
}