Sequential purification and crystal growth for the production of low cost silicon substrates. Final technical report, September 15, 1979-January 1, 1982

Technical Report · Fri Jan 01 00:00:00 EST 1982

DOI:https://doi.org/10.2172/6631617· OSTI ID:6631617

d'Aragona, F. S.; Liaw, H. M.; Heminger, D.

A technique is described for sequential purification of metallurgical grade silicon (MG-Si) followed by crystal growth. The steps of the sequence include: leaching of MG-Si, phase separation of non-soluble impurities from molten silicon, reactive gas treatment of molten silicon, liquid-liquid extraction (called slagging), and impurities redistribution using ingot pulling. Each step is summarized. The removal of impurities from the tang end of 1-pulled ingots by thermomigration of impurity clusters is illustrated. The effect of impurity gettering as a way of improving the efficiency of epitaxial solar cells deposited on nearly-single crystal substrates is described for different gettering techniques. (LEW)

• Research Organization: Motorola, Inc., Phoenix, AZ (USA). Semiconductor Products Sector
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6631617
• Report Number(s): DOE/SERI-8119-3/7; ON: DE83003862
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON
CRYSTAL GROWTH
PURIFICATION
SILICON SOLAR CELLS
GETTERING
ANNEALING
CURRENT DENSITY
EFFICIENCY
ELECTRIC POTENTIAL
EPITAXY
EXPERIMENTAL DATA
FILL FACTORS
LEACHING
MIGRATION
THICKNESS
DATA
DIMENSIONS
DIRECT ENERGY CONVERTERS
DISSOLUTION
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
INFORMATION
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SEPARATION PROCESSES
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture