Exciton-exciton annihilation and exciton kinetics in poly(di-[ital n]-hexylsilane)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Chemistry, Princeton University, Princeton, New Jersey 08544 (United States)
We have found that charge carriers can be generated by exciton-exciton annihilation in solid films of poly(di-[ital n]-hexylsilane). We use this phenomenon to study the kinetics of excitons at ambient temperature and show that the rate constant for exciton-exciton annihilation [gamma] is 2[times]10[sup [minus]7] cm[sup 3] s[sup [minus]1], in excellent agreement with the value we obtained previously by other means. The quantum efficiency for carrier production, at an electric field of 2[times]10[sup 5] V cm[sup [minus]1], is 1.3[times]10[sup [minus]3] per annihilation event. We also show that [gamma] is independent of the initial energy of the exciton state, even to energies far out on the long-wavelength tail of the exciton absorption band, and that the excitons remain mobile throughout their 600-ps lifetime.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6630998
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Vol. 47:15; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILANES
EXCITONS
PHOTOCONDUCTIVITY
PHOTOVOLTAIC EFFECT
TRANSPORT THEORY
AMBIENT TEMPERATURE
CHARGE CARRIERS
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ENERGY-LEVEL DENSITY
FILMS
FLUORESCENCE
KINETICS
NONLINEAR OPTICS
POLYMERS
QUANTUM EFFICIENCY
EFFICIENCY
ELECTRICAL PROPERTIES
HYDRIDES
HYDROGEN COMPOUNDS
LUMINESCENCE
OPTICS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTROMAGNETIC EFFECTS
PHYSICAL PROPERTIES
QUASI PARTICLES
SILICON COMPOUNDS
360606* - Other Materials- Physical Properties- (1992-)