Energy efficient process for continuous production of thin semiconductor films on metallic substrates

Patent · Tue Jul 27 00:00:00 EDT 1982

OSTI ID:6630841

Schumacher, J C

An energy efficient process is disclosed for the continuous production of semiconductor matrices formed from electrodepositing doped silicon or germanium films on metallic sheet substrates. The energy released from such electrodeposition can then be used to regenerate the anode material used in the electrodepositing position.

• Assignee: EDB-83-042937
• Patent Number(s): US 4341610
• OSTI ID: 6630841
• Resource Relation: Patent File Date: Filed date 27 Mar 1980; Other Information: PAT-APPL-134446
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRODEPOSITION
MATRIX MATERIALS
SEMICONDUCTOR MATERIALS
ELECTRODES
ENERGY EFFICIENCY
GERMANIUM
METALS
PRODUCTION
REDOX REACTIONS
REGENERATION
SHEETS
SILICON
SUBSTRATES
CHEMICAL REACTIONS
DEPOSITION
EFFICIENCY
ELECTROLYSIS
ELEMENTS
LYSIS
MATERIALS
SEMIMETALS
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture