Method for manufacturing a semiconductor element utilizing thermal neutron irradiation and annealing

Patent · Tue Nov 18 00:00:00 EST 1980

OSTI ID:6624662

Meinders, H

In a known process for manufacturing a semiconductor element, a single crystal semiconductor body is subjected to at least one high temperature treatment such as diffusion or epitaxy in order to create a pn junction. A metallization is then applied to the upper surface of the semiconductor to constitute an electrode. Thereafter the element is subjected to an annealing process at intermediate temperatures. In accordance with the invention, a semiconductor body is irradiated following the manufacture of the pn junctions and prior to the metallization. The radiation causes lattice displacements which in turn decrease the lifetime of the minority carriers. The above-mentioned annealing process then also serves partially to heal the lattice displacements caused by the radiation.

• Assignee: Bosch, Robert Gmbh (Germany, Federal Republic Of)
• Patent Number(s): US 4234355
• OSTI ID: 6624662
• Resource Relation: Patent Priority Date: Priority date 13 Dec 1977, German, Federal Republic of (F.R. Germany)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR DEVICES
FABRICATION
ANNEALING
IRRADIATION
P-N JUNCTIONS
SEMICONDUCTOR DIODES
THERMAL NEUTRONS
BARYONS
ELEMENTARY PARTICLES
FERMIONS
HADRONS
HEAT TREATMENTS
JUNCTIONS
NEUTRONS
NUCLEONS
SEMICONDUCTOR JUNCTIONS
420800* - Engineering- Electronic Circuits & Devices- (-1989)