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Title: Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980

Abstract

Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Znmore » layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)« less

Authors:
; ; ;
Publication Date:
Research Org.:
Rockwell International Corp., Anaheim, CA (USA). Electronic Devices Div.
Sponsoring Org.:
USDOE
OSTI Identifier:
6620441
Report Number(s):
COO-3004-4
DOE Contract Number:  
AC02-79ET23004
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CADMIUM SULFIDE SOLAR CELLS; FABRICATION; CADMIUM SULFIDES; VACUUM COATING; GALLIUM PHOSPHIDES; CHEMICAL VAPOR DEPOSITION; INDIUM PHOSPHIDE SOLAR CELLS; INDIUM PHOSPHIDES; CADMIUM ADDITIONS; CRYSTAL DOPING; EPITAXY; FILMS; P-TYPE CONDUCTORS; POLYCRYSTALS; SUBSTRATES; ZINC ADDITIONS; ALLOYS; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; CRYSTALS; DEPOSITION; DIRECT ENERGY CONVERTERS; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INORGANIC PHOSPHORS; MATERIALS; PHOSPHIDES; PHOSPHORS; PHOSPHORUS COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PNICTIDES; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR EQUIPMENT; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; ZINC ALLOYS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Manasevit, H. M., Ruth, R. P., Moudy, L. A., Yang, J. J.J., and Johnson, R. E. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980. United States: N. p., 1980. Web. doi:10.2172/6620441.
Manasevit, H. M., Ruth, R. P., Moudy, L. A., Yang, J. J.J., & Johnson, R. E. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980. United States. https://doi.org/10.2172/6620441
Manasevit, H. M., Ruth, R. P., Moudy, L. A., Yang, J. J.J., and Johnson, R. E. 1980. "Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980". United States. https://doi.org/10.2172/6620441. https://www.osti.gov/servlets/purl/6620441.
@article{osti_6620441,
title = {Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980},
author = {Manasevit, H. M. and Ruth, R. P. and Moudy, L. A. and Yang, J. J.J. and Johnson, R. E.},
abstractNote = {Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Zn layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)},
doi = {10.2172/6620441},
url = {https://www.osti.gov/biblio/6620441}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Aug 01 00:00:00 EDT 1980},
month = {Fri Aug 01 00:00:00 EDT 1980}
}