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Title: Ion mixing of semiconductor superlattices

Abstract

Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method in induce compositional disorder is to implant a moderate dose of impurity ions ({approximately} 10 {sup 15} /cm{sup 2}) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of fivemore » parameters (1) irradiation temperature, (2) dose dependence (3) annealing, and (4) electrically active ions. We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed. 49 refs., 6 figs.« less

Authors:
; ; ; ; ; ; ;  [1]; ;  [2];  [3]
  1. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)
  2. (Oak Ridge National Lab., TN (USA))
  3. (Bellcore, Red Bank, NJ (USA))
Publication Date:
Research Org.:
Oak Ridge National Lab., TN (USA)
Sponsoring Org.:
DOE/ER
OSTI Identifier:
6614204
Alternate Identifier(s):
OSTI ID: 6614204; Legacy ID: DE90017769
Report Number(s):
CONF-900936-5
ON: DE90017769
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Conference
Resource Relation:
Conference: 7. international conference on ion beam modification of materials, Knoxville, TN (USA), 9-14 Sep 1990
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; MIXING; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; ION BEAMS; IRRADIATION; SEMICONDUCTOR MATERIALS; SUPERLATTICES; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES 360601* -- Other Materials-- Preparation & Manufacture; 360605 -- Materials-- Radiation Effects

Citation Formats

Xia, W., Hsu, S.N., Han, C.C., Pappert, S.A., Zhu, B., Cozzolino, C., Yu, P.K.L., Lau, S.S., Poker, D.B., White, C.W., and Schwarz, S.A. Ion mixing of semiconductor superlattices. United States: N. p., 1990. Web.
Xia, W., Hsu, S.N., Han, C.C., Pappert, S.A., Zhu, B., Cozzolino, C., Yu, P.K.L., Lau, S.S., Poker, D.B., White, C.W., & Schwarz, S.A. Ion mixing of semiconductor superlattices. United States.
Xia, W., Hsu, S.N., Han, C.C., Pappert, S.A., Zhu, B., Cozzolino, C., Yu, P.K.L., Lau, S.S., Poker, D.B., White, C.W., and Schwarz, S.A. Mon . "Ion mixing of semiconductor superlattices". United States.
@article{osti_6614204,
title = {Ion mixing of semiconductor superlattices},
author = {Xia, W. and Hsu, S.N. and Han, C.C. and Pappert, S.A. and Zhu, B. and Cozzolino, C. and Yu, P.K.L. and Lau, S.S. and Poker, D.B. and White, C.W. and Schwarz, S.A.},
abstractNote = {Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method in induce compositional disorder is to implant a moderate dose of impurity ions ({approximately} 10 {sup 15} /cm{sup 2}) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters (1) irradiation temperature, (2) dose dependence (3) annealing, and (4) electrically active ions. We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed. 49 refs., 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

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