Nonparabolic conduction bands and masses in strained-single-quantum wells
- Sandia National Labs., Albuquerque, NM (USA)
- Princeton Univ., NJ (USA). Dept. of Electrical Engineering
Experimental measurements of the conduction-band dispersion curves in bulk GaAs and GaAs/AlGaAs (and InGaAs/GaAs) quantum-well structures generally have been restricted to cyclotron resonance measurements. To obtain an accurate conduction-band E vs. k dispersion curve using cyclotron resonance measurements, many different samples with differing carrier concentrations are required. The various parameters to the band structure then have been obtained by fitting a k{center dot}p calculation to the data. The breaking of the usual selection rules for magneto-luminescence transitions by coulomb scattering of the carries by the dopant ions has been discussed. Theory and experiment show that higher order transitions dominate the recombination process at low temperatures, while the direct transitions dominate at higher temperatures. The temperature dependences permit a simultaneous determination both the conduction and valence-band dispersion curves and has been reported for In{sub x}Ga{sub 1 {minus}x}As/GaAs strained-single-quantum well (SSQW) structures. In this paper, we present the results of the measurements the conduction-band energy dispersion curve (and nonparabolic conduction-band mass) obtained from magneto-luminescence measurement on a single In{sub 0.25}Ga{sub 0.75}As/GaAs 80 {Angstrom} n-type SSQW structure. Also presented are the results of the measurement, on the same sample, of the conduction-band mass using far-infrared cyclotron resonance techniques. 14 refs., 3 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOE/DP
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6613990
- Report Number(s):
- SAND-90-1755C; CONF-901105-8; ON: DE90017028
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society, Boston, MA (USA), 26 Nov - 1 Dec 1990
- Country of Publication:
- United States
- Language:
- English
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