Detailed examination of time-resolved pulsed Raman temperature measurements of laser annealed silicon

Journal Article · Sat Jan 01 00:00:00 EST 1983 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:6613389

Jellison, Jr, G E; Lowndes, D H; Wood, R F

Raman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6613389
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Vol. 13
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ANNEALING
ENERGY DENSITY
LASER RADIATION
PULSED IRRADIATION
RAMAN EFFECT
SEMICONDUCTOR MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
IRRADIATION
MATERIALS
RADIATIONS
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture