Near-room-temperature operation of Pb/sub 1-//sub x/Sr/sub x/Se infrared diode lasers using molecular beam epitaxy growth techniques

Journal Article · Mon Dec 26 00:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100208· OSTI ID:6611991

Spanger, B; Schiessl, U; Lambrecht, A; Boettner, H; Tacke, M

Double-Heterostructure lasers have been fabricated with an active layer of PbSe sandwiched between cladding layers of Pb/sub 1-//sub x/ Sr/sub x/ Se. They were operated up to T = 290 K (17 /sup 0/C) in pulsed and T = 169 K in cw mode. This is the highest operational temperature in pulsed mode reported for lead salt lasers in the mid-infrared. The emission wavelength tunes with temperature from 8.0 ..mu..m (T = 20 K) to 4.4 ..mu..m (T = 285 K).

• Research Organization: Fraunhofer-Institute fuer Physikalische Messtechnik, Heidenhofstrasse 8, D-7800 Freiburg, Federal Republic of Germany
• OSTI ID: 6611991
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 53:26
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
EXPERIMENTAL DATA
HETEROJUNCTIONS
LEAD SELENIDES
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
STRONTIUM COMPOUNDS
TUNING
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
DATA
EPITAXY
INFORMATION
JUNCTIONS
LASERS
LEAD COMPOUNDS
NUMERICAL DATA
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)