Assessment of TFT amplifiers for a-Si:H PIXEL particle detectors

Conference · Fri Jun 01 00:00:00 EDT 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:6608815

Cho, G; Conti, M; Drewery, J S; Fujieda, I; Kaplan, S N; Perez-Mendez, V; Qureschi, S ^[1]; Street, R A ^[2]

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1. Lawrence Berkeley Lab., CA (USA)
2. Xerox Palo Alto Research Center, CA (USA)

The authors have investigated the application of thin film electronics technology to making a signal amplifier and readout circuit for amorphous silicon PIXEL particle detectors which can detect minimum ionizing particles. Characteristics of currently available TFTs are reviewed and preliminary designs of a-Si:H and poly-Si amplifiers for a 300 {mu}m {times} 300 {mu}m PIXEL array are proposed. Based on measurement of small signal parameters and noise spectrum of individual a-Si:H and poly-Si TFTs, the overall gain, time-response and signal-to-noise ratio are calculated.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6608815
• Report Number(s): CONF-900143-; CODEN: IETNA; TRN: 90-031735
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 37:3; Conference: Institute for Electronic and Electrical Engineers (IEEE) nuclear science symposium, San Francisco, CA (USA), 15-19 Jan 1990; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
PULSE AMPLIFIERS
THIN FILMS
SI SEMICONDUCTOR DETECTORS
ELECTRONIC CIRCUITS
AMORPHOUS STATE
CHARGED PARTICLE DETECTION
IONIZATION
MICROELECTRONICS
SIGNAL-TO-NOISE RATIO
AMPLIFIERS
DETECTION
ELECTRONIC EQUIPMENT
EQUIPMENT
FILMS
MEASURING INSTRUMENTS
RADIATION DETECTION
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
440104* - Radiation Instrumentation- High Energy Physics Instrumentation
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)