Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures

Journal Article · Wed Feb 01 00:00:00 EST 1995 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.370077· OSTI ID:6600208

Belenky, G L; Kazarinov, R F; Lopata, J; Tanbun-Elk, T; Garbinski, P A ^[1]; Luryi, S ^[2]

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1. AT and T Bell Labs., Murray Hill, NJ (United States)
2. State Univ. of New York, Stony Brook, NY (United States). Dept. of Electrical Engineering

Leakage of electrons out of the active region of InGaAsP/InP laser heterostructures at different temperatures was measured by a purely electrical method. Comparison of the obtained results with the results of modeling indicates that special attention should be paid to the acceptor doping levels in the p cladding layer immediately adjacent the active region. Lower acceptor concentration may lead to unacceptably high thermionic leakage.

• OSTI ID: 6600208
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 42:2; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ARSENIC COMPOUNDS
CHARGE CARRIERS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
LASER MATERIALS
PHOSPHIDES
SEMICONDUCTOR LASERS
COMPARATIVE EVALUATIONS
EXPERIMENTAL DATA
MEASURING METHODS
THERMIONIC EMISSION
DATA
EMISSION
EVALUATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
MATERIALS
NUMERICAL DATA
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)