InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers

Journal Article · Mon May 31 00:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.109249· OSTI ID:6599551

Schneider, Jr, R P; Lott, J A ^[1]

---

1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

Distributed Bragg reflectors (DBRs) composed of In[sub 0.5]Al[sub 0.5]P/In[sub 0.5](Al[sub [ital y]]Ga[sub 1[minus][ital y]])[sub 0.5]P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0[le][ital y][le]0.6) and peak reflectivity wavelength (720 nm[le][lambda][le]565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of [lambda][similar to]670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6599551
• Journal Information: Applied Physics Letters; (United States), Vol. 62:22; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
ALUMINIUM PHOSPHIDES
BRAGG REFLECTION
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
SEMICONDUCTOR LASERS
MIRRORS
HETEROJUNCTIONS
REFLECTIVITY
VAPOR PHASE EPITAXY
ALUMINIUM COMPOUNDS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
SURFACE PROPERTIES
426002* - Engineering- Lasers & Masers- (1990-)
360606 - Other Materials- Physical Properties- (1992-)