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Title: InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers

Abstract

Distributed Bragg reflectors (DBRs) composed of In[sub 0.5]Al[sub 0.5]P/In[sub 0.5](Al[sub [ital y]]Ga[sub 1[minus][ital y]])[sub 0.5]P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0[le][ital y][le]0.6) and peak reflectivity wavelength (720 nm[le][lambda][le]565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of [lambda][similar to]670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.

Authors:
;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
Publication Date:
OSTI Identifier:
6599551
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (United States)
Additional Journal Information:
Journal Volume: 62:22; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; ALUMINIUM PHOSPHIDES; BRAGG REFLECTION; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; SEMICONDUCTOR LASERS; MIRRORS; HETEROJUNCTIONS; REFLECTIVITY; VAPOR PHASE EPITAXY; ALUMINIUM COMPOUNDS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; JUNCTIONS; LASERS; OPTICAL PROPERTIES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REFLECTION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS; SURFACE PROPERTIES; 426002* - Engineering- Lasers & Masers- (1990-); 360606 - Other Materials- Physical Properties- (1992-)

Citation Formats

Schneider, Jr, R P, and Lott, J A. InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers. United States: N. p., 1993. Web. doi:10.1063/1.109249.
Schneider, Jr, R P, & Lott, J A. InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers. United States. doi:10.1063/1.109249.
Schneider, Jr, R P, and Lott, J A. Mon . "InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers". United States. doi:10.1063/1.109249.
@article{osti_6599551,
title = {InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers},
author = {Schneider, Jr, R P and Lott, J A},
abstractNote = {Distributed Bragg reflectors (DBRs) composed of In[sub 0.5]Al[sub 0.5]P/In[sub 0.5](Al[sub [ital y]]Ga[sub 1[minus][ital y]])[sub 0.5]P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0[le][ital y][le]0.6) and peak reflectivity wavelength (720 nm[le][lambda][le]565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of [lambda][similar to]670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.},
doi = {10.1063/1.109249},
journal = {Applied Physics Letters; (United States)},
issn = {0003-6951},
number = ,
volume = 62:22,
place = {United States},
year = {1993},
month = {5}
}